ES3AF THRU ES3JF
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 3 A
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
FEATURES
•
For surface mounted applications
•
Low profile package
•
Glass Passivated Chip Juntion
•
Superfast reverse recovery time
•
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg 0.00086oz
Absolute Maximum Ratings and Characteristics
1
2
Top View
Marking Code:
ES3AF~ES3JF: ES3A~ES3J
Simplified outline SMAF and symbol
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES3AF
ES3BF
ES3CF
ES3DF
ES3EF
ES3GF
ES3JF
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
= 100
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 3A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
Maximum Reverse Recovery Time
at I
F
=0.5A, I
R
=1A, I
rr
=0.25A
Operating and Storage Temperature Range
Ta = 25
°C
Ta =125
°C
3
A
I
FSM
100
A
V
F
1
5
200
1.25
1.7
V
I
R
μA
C
j
45
pF
t
rr
T
j
, T
stg
35
ns
°C
-55 ~ +150
REV.08
1 of 3
ES3AF THRU ES3JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
+0.5
D.U.T
25Vdc
approx
PULSE
GENERATOR
Note 2
0
-0.25
1 ohm
NonInductive
t
rr
+
-
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
3.5
300
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
3.0
2.4
1.8
1.2
0.6
0.0
25
50
75
100
125
150
175
Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0. 315"(8.0
×8.
0mm )
pad areas
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.1
0
20
40
60
80
100
Lead Temperature (°C)
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
10
45
Fig.5 Typical Junction Capacitance
1.0
ES3AF
ES3EF
Junction Capacitance ( pF)
T
J
=25
°C
40
35
30
25
20
15
10
0.1
1
10
100
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.1
ES3JF
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
Instaneous Forward Voltage (V)
Reverse Voltage (V)
REV.08
2 of 3
stm32/stm8
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