FDN327N
N-Channel Enhancement
Feature
●
Mode MOSFET
@V
GS
= 4.5V.
@V
GS
= 2.5V.
20V/3.0A,
R
DS(ON)
= 80mΩ(MAX)
R
DS(ON)
= 90mΩ(MAX)
●
Super High dense cell design for extremely low R
DS(ON) .
Reliable and Rugged.
SOT-23 for Surface Mount Package.
●
●
A
pplications
●
●
SOT-23
Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
T
A
=25℃
Unless Otherwise noted
Symbol
V
DS
V
GS
I
D
Limit
20
±8
3.0
Units
V
V
A
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BVDSS
IDSS
IGSSF
IGSSR
T
A
=25℃
Symbol
Unless Otherwise noted
Test Conditions
Min
Typ.
Max
Units
VGS=0V, ID=250µA
VDS=12V, VGS=0V
VGS=8V, VDS=0V
VGS=-8V, VDS=0V
20
-
-
-
-
-
-
-
-
1
100
-100
V
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Static Drain-source
RDS(ON)
On-Resistance
VGS =2.5V, ID =2.8A
-
75
90
mΩ
VGS(th)
VGS= VDS, ID=250µA
VGS =4.5V, ID =3.0A
0.4
-
-
70
1.3
80
V
mΩ
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.94A
1.2
V
REV.08
1 of 4
FDN327N
Typical Characteristics
16
14
14
12
10
8
6
4
2
0
0
5
12
VDS,Drain-to-Source
3
Voltage(Volts)
4
VGS=2.5，3，3.5，4，4.5，5，6，7V
VDS=1.5V
12
10
8
Tj＝125℃
6
4
2
0
0
0.5
1
1.5
2
2.5
3
VGS,Gate-to-Source
Voltage(Volts)
VGS=2.0V
Tj＝25℃
Figure 1．Output Characteristics
Figure 2．Transfer Characteristics
25
1
I
D=250uA
24.5
0.9
0.8
0.7
ID=250uA
24
0.6
23.5
0.5
0.4
23
0.3
0.2
0.1
22
0
50
Tj.Junction
100
150
200
Temperature(℃)
0
0
50
Tj.Junction
100
150
200
Temperature(℃)
22.5
Figure 3．Breakdown Voltage Variation
with Temperature
Figure 4．Gate Threshold Variation
with Temperature
REV.08
2 of 4
FDN327N
Typical Characteristics
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
50
Tj.Junction
100
150
200
Temperature(℃)
0
0
5
ID-Drain
10
Current(A)
15
0.04
0.1
0.12
2.5V/2.8A
0.08
4.5V/3.0A
0.06
VGS=2.5V
VGS=4.5V
0.02
Figure 5．
On-Resistance Variation
with Temperature
On-Resistance vs. Drain Current
Figure 6．
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
100
ID=3.0A
10
Tj＝150℃
1
Tj＝25℃
ID=2.8A
0.04
0.02
0
0
24
VGS,Gate-to-Source
68
Voltage(Volts)
10
0.1
0
0.5
1
1.5
Voltage(V)
2
VSD-Source-to-Drain
Figure 7．On-Resistance vs. Gate-to-Source
Voltage
Figure 8．Source-Drain Diode Forward
Voltage
REV.08
3 of 4
详细参数
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