2SK3019
N-channel MOSFET
FEATURES
Low on-resistance
Fast
switching speed
Low
voltage drive
makes this device ideal for portable equipment
Easily designed
drive
circuits
Easy to parallel
Marking: KN
MOSFET MAXIMUM RATINGS (T
a
= 25°C unless otherwise noted)
Symbol
V
DS
V
GSS
I
D
R
θJA
P
D
T
J
T
stg
Parameter
Drain-Source
Voltage
SOT-523
3
1
1. GATE
2. SOURCE
3. DRAIN
2
Equivalent circuit
Value
30
±20
0.1
833
0.15
150
-55~+150
Units
V
V
A
℃
/W
W
℃
℃
Gate-Source Voltage
Continuous Drain Current
Thermal Resistance, Junction-to-Ambient
Power Dissipation
Junction Temperature
Storage Temperature
MOSFET ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V, V
DD
=5V,
I
D
=10mA, Rg=10Ω, R
L
=500Ω,
15
35
80
80
ns
ns
ns
ns
C
iss
C
oss
C
rss
V
DS
=5V,V
GS
=0V,f =1MHz
13
9
4
pF
pF
pF
V
DS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
GS
= 0V, I
D
= 10µA
V
DS
=30V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
= 3V, I
D
=100µA
V
GS
= 4V, I
D
=10mA
V
GS
=2.5V,I
D
=1mA
V
DS
=3V, I
D
= 10mA
20
0.8
30
1
±1
1.5
8
13
V
µA
µA
V
Ω
Ω
mS
Symbol
Test Condition
Min
Typ
Max
Units
* These parameters have no way to verify.
REV.08
1 of 3
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