EABS21 THRU EABS26
Surface Mount Super fast Recovery Bridge Rectifier
Reverse Voltage –100 to 600 V
Forward Current – 2 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Super fast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 88mg/0.0031oz
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
2
ABS/LBF Package
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
EABS21
E ABS22
EABS24
E ABS26
Units
V
V
V
100
70
100
200
140
200
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 2 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
T
a
= 25
°C
T
a
=125
°C
(Note: 1)
2
A
A
1.25
1.70
V
I
FSM
50
V
F
0.95
5
100
40
35
80
I
R
μA
C
j
t
rr
R
θJA
T
j
, T
stg
pF
ns
°C/W
°C
Maximum Reverse Recovery Time
(Note: 2)
Typical Thermal Resistance
(Note: 3)
Operating and Storage Temperature Range
-55 ~ +150
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Measured with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A.
3 . Mounted on glass epoxy PC board with 4×1.5"
×
1.5"
（
3.81
×
3.81 cm
）copper
pad.
REV.08
1 of 3
EABS21 THRU EABS26
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t
rr
+0.5
+
25Vdc
approx
D.U.T
PULSE
GENERATOR
Note 2
0
-0.25
-
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
3.0
300
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.0
25
50
75
100
125
150
175
0.1
0
20
40
60
80
100
Case Temperature (°C)
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
T
J
=25
°C
1.0
EABS21~EABS22
0.1
EABS2 4
EABS 26
10
0.01
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
70
60
50
40
30
20
10
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
Reverse Voltage (V)
Fig.6- Typical Transient Thermal Impedance
100
Transient Thermal Impedance（
°C
/W）
10
10
100
1
0.01
0.1
1
10
100
Number of Cycles
t, Pulse Duration（sec）
REV.08
2 of 3
嵌入式系统
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