1N4001G THRU 1N4007G
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V Forward Current - 1 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.055g / 0.002oz
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: M1~M7
Simplified outline SMA and symbol
Symbols
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
Units
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1
600
420
600
800
560
800
1000
700
1000
V
V
V
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
（1）
A
A
V
I
FSM
30
V
F
1.1
5
50
15
75
-55 ~ +150
T
a
= 25
°C
T
a
=125
°C
I
R
μA
C
j
R
θJA
T
j
, T
stg
pF
°C/W
°C
Typical Thermal Resistance
（2）
Operating and Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas.
1 of 3
1N4001G THRU 1N4007G
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μ
A)
1.2
100
T
J
=150
°C
Fig.2 Typical Instaneous Reverse
Characteristics
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
10
T
J
=125
°C
T
J
=100
°C
1.0
T
J
=75
°C
0.1
T
J
=25
°C
0.0
25
50
75
100
125
150
175
0.01
0
200
400
600
800
Case Temperature (°C)
Instaneous Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Junction Capacitance ( pF)
1.0
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
0.5
°
C
°
C
2 5
°
C
25
=1
=1
00
10
T
J
0.2
T
J
T
J
=
0.1
0.6
1
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
35
30
25
20
15
10
05
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles
2 of 3
详细参数
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