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RS8551, RS8552
RS8553, RS8554
Zero-Drift, Rail-to-Rail I/O CMOS Operational
Amplifiers
Features
•
•
•
•
•
•
•
•
•
•
•
•
Low Offset Voltage: 1uV
Input Offset Drift: 0.005μV/°
C
High Gain Bandwidth Product: 4.5MHz
Rail-to-Rail Input and Output
High Gain, CMRR, PSRR:130dB
High Slew Rate: 2.7V/μs
Low Noise: 0.75uVp-p (0.01~10Hz)
Low Power Consumption: 640μA /op amp
Overload Recovery Time:1us
Low Supply Voltage: +2.7 V to +5.5 V
No External Capacitors Required
Extended Temperature: -40° to +125°
C
C
Description
The RS8551,RS8552,RS8554,RS8553(dual version
&shutdown)series of CMOS operational amplifiers
use auto-zero techniques to simultaneously provide
very low offset voltage (5μV max) and near-zero drift
over time and temperature. This family of amplifiers
has ultralow noise, offset and power.
This miniature, high-precision operational amplifiers
offset high input impedance and rail-to-rail input and
rail-to-rail output swing. With high gain-bandwidth
product of 4.5MHz and slew rate of 2.7V/μs.
Single or dual supplies as low as +2.7V(±1.35V) and
up to +5.5V (±2.75V) may be used.
The RS8551/RS8552/RS8554/RS8553(dual version
with shutdown) are specified for the extended
industrial and automotive temperature range (-40°
C
to 125° The RS8551 single amplifier is available
C).
in 5-lead SOT23, 8-lead MSOP8 and 8-lead SOIC
packages, The RS8552 dual amplifier is available in
8-lead SOIC and 8-lead TSSOP narrow surface
mount packages, The RS8553(dual version with
shutdown) comes in
Micro-SIZE
MSOP-10. The
RS8554 quad is available in 14-lead SOIC and 14-
lead narrow TSSOP packages.
Applications
•
•
•
•
•
•
•
•
Temperature Sensors
Medical/Industrial Instrumentation
Pressure Sensors
Battery-Powered Instrumentation
Active Filtering
Weight Scale Sensor
Strain Gage Amplifiers
Power Converter/Inverter
REV B.4
1
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RS8551, RS8552
RS8553, RS8554
PIN CONFIGURATIONS
RS8551
OUT
RS8551
5
RS8552
8
NC
V+
OUT A
-IN A
+IN A
V-
1
2
3
4
+
1
2
3
NC
V+
1
2
3
4
8
7
V+
OUTB
-IN B
+IN B
-IN
V-
+IN
+
-
4
+IN
+
-IN
V-
5
NC
SOT23-5
SOIC-8(SOP8),MSOP-8
RS8553
OUT A
OUT A
-IN A
+IN A
V-
En A
1
2
3
4
5
MSOP-10
10
V+
OUT B
-IN B
+IN B
En B
-
+
A
9
+
B
-
8
7
6
Note: NC indicates no internal connection
-
7
A
B
+
6
OUT
6
5
SOIC-8(SOP8),MSOP-8
RS8554
1
2
3
4
5
6
7
A
- +
D
+ -
14
13
12
11
10
OUT D
-IN D
-IN A
+IN A
V+
+IN B
-IN B
OUT B
+IN D
V-
+IN C
-IN C
OUT C
- +
B
+ -
C
9
8
SOIC-14(SOP14),TSSOP-14
2
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RS8551, RS8552
RS8553, RS8554
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage, V+ to V-...............................................7.0V
Input Terminals, Voltage
(2)
…………... – 0.5 to (V+) + 0.5V
Current
(2)
…………..……....…..... ±
10mA
Storage Temperature ……….…………… −65° to +150°
C
C
Operating Temperature ……….………… −40° to +125°
C
C
Junction Temperature................................................150°
C
Package Thermal Resistance @ T
A
= +25°
C
SOT23-5, SOT23-6………………….………………200°
C/W
MSOP-10, SOIC-8 …………………….…………... 150°
C/W
SOIC-14, TSSOP-14………….……….……………100°
C/W
Lead Temperature (Soldering, 10s) ……………........260°
C
ESD Susceptibility
HBM …......................................................................5000V
MM ……………………….........………………...……….400V
(1)
Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those
specified is not implied.
(2)
Input terminals are diode-clamped to the power-supply rails. Input
signals that can swing more than 0.5V beyond the supply rails should
be current-limited to 10mA or less.
ESD SENSITIVITY CAUTION
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes
could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
°
C
3
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RS8551, RS8552
RS8553, RS8554
ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range,
T
A
= –40
°
to +125
°
C
C.
(At T
A
= +25
0
C
, V
s
=5V, R
L
= 10kΩ connected to V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.)
RS8551, RS8552,
RS8553, RS8554
MIN
TYP
MAX
1
0.005
VS = +2.7V to +5.5V, VCM = 0
110
130
0.1
I
B
I
os
e
n
p-p
e
n
p-p
e
n
i
n
V
CM
(V–) – 0.1V < V
CM
< (V+)+ 0.1V
f=0.01Hz to 10Hz
f=0.01Hz to 1Hz
f=1KHz
f=10Hz
(V-)-0.1
110
130
1
5
A
OL
SR
GBW
RL=10KΩ, VO=0.3V to 4.7V, -40°C~125°C
G=+1
110
130
2.7
4.5
1
V
OH
V
OL
I
SC
2.7
I
Q
640
2
150
0
0.75(V+)
50
1
5
+0.8
V+
RL=100 KΩ to GND
RL=10 KΩ to GND
Output Voltage Low
Short-Circuit Current
POWER SUOOLY
Operating Voltage Range
Quiescent Current/ Amplifier
SHUTDOWN
t
OFF
t
ON
V
L
(shutdown)
V
H
(amplifier is active)
Input Bias Current of Enable Pin
I
QSD
μs
us
V
V
pA
uA
5.5
870
V
uA
RL=100 KΩ to V+
RL=10 KΩ to V+
4.99
4.95
4.998
4.98
1
10
50
10
30
VCM = Vs/2
50
10
0.75
0.22
35
1.5
(V+)+0.1
5
0.05
PARAMETER
OFFSET VOLTAGE
Input Offset Voltage
VS Temperature
VS Power Supply
Channel Separation, dc
INPUT BIAS CURRENT
Input Bias Current
Input Offset Current
NOISE PERFORMANCE
Input Voltage Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
INPUT CAPACITANCE
Differential
Common-Mode
OPEN-LOOP GAIN
Open-Loop Voltage Gain
DYNAMIC PERFORMANCE
Slew Rate
Gain-Bandwidth Product
Overload Recovery Time
OUTPUT CHARACTERISTICS
Output Voltage High
V
os
dV
os
/dT
PSRR
CONDITION
V
CM
= V
s
/2
UNIT
μV
μV/
0
C
dB
μV/V
pA
pA
μVpp
μVpp
nV/√Hz
fA/√Hz
V
dB
pF
pF
dB
V/μs
MHz
us
V
V
mV
mV
mA
Common-Mode Rejection Ratio CMRR
4
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RS8551, RS8552
RS8553, RS8554
TYPICAL CHARACTERISTICS
At T
A
= +25C, Vs=5V, R
L
= 10kΩ connected to V
S
/2, V
OUT
= V
S
/2, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION
DISTRIBUTION
6
OFFSET VOLTAGE DRIFT PRODUCTION
DISTRIBUTION
Number Of Amplifiers
-4
-3
-2
-1
0
1
2
3
5
4
3
2
1
0
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Population
Offset Voltage (uV)
OPEN−LOOP GAIN AND PHASE vs FREQUENCY
140
120
Gain
130
10K
Input Offset Drift (nV/℃)
INPUT BIAS CURRENT vs TEMPERATURE
Open-Loop Gain(dB)
Phase
90
70
50
30
10
10
1K
100K
-10
10M
Phase Margin (°)
100
80
60
40
20
0
-20
Input Bias Current(pA)
110
1K
100
10
-40 -20
0
20
40
60
80 100 120 140
Frequency(Hz)
Temperature(℃)
COMMON−MODE REJECTION RATIO vs
FREQUENCY
140
120
100
POWER−SUPPLY REJECTION RATIO vs
FREQUENCY
140
120
100
PSRR(dB)
80
60
40
20
0
100
1K
10K
100K
1M
10M
CMRR(dB)
80
60
40
20
0
100
1K
10K
100K
1M
10M
Frequency(Hz)
Frequency(Hz)
5
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