PTP4 N65 /PTF4 N65
65 0V/4 A
N-Channel A dv anced Power MOSFET
Features
■
■
■
■
R
DS(on)
(Typical 2.6
Ω
)@V
GS
=10V
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
GDS
GDS
TO-220
Absolute Maximum Ratings
TO-220F
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
Symbol
Parameter
Rating
TO-220 TO-22F
Unit
Common Ratings (T
J
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
±30
650
50 to + 150
50 to + 150
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
I
S
4
Mounted on Large Heat Sink (T
J
=25°C Unless Otherwise Noted)
I
DM
Pulse Drain Current Tested (Sillicon Limit)
Continuous Drain current@V
GS
=10V
Maximum Power Dissipation
Sing Pulsed Avalanche Energy
(N ote2)
(Note1)
16
4
109
200
1.15
65
39
200
3.2
65
A
A
W
mJ
°C/W
°C/W
I
D
P
D
E
AS
R
JC
R
JA
T
C
=25°C
Thermal Resistance Junction−to−Case
Thermal Resistance Junction−to−Ambient
Note :
1. Repetitive Rating:Pulse width limited by maximum junction temperature.
2. IL=25mH,IAS=4 A,VDD=50V,RG=25 Ω,Tj=25
°C
- 1-
2018-8-22
PTP4 N65 /PTF4 N65
65 0V/4 A
N-Channel A dv anced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain current(Tc=25℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance note A
VGS=0V ID=250μA
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V,ID=2A
650
--
--
2
--
note B
--
--
--
1
±100
V
μA
nA
V
Ω
V
GS(TH)
R
DS(ON)
3
2.6
4
3.0
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Input Capacitance
VDS=25 V,VGS=0V,
Output Capacitance
f=1MHz
Reverse Transfer Capacitance
Total Gate Charge
VDS=480V,ID=4A
Gate-Source Charge
Gate-Drain Charge
note B
--
--
--
--
--
--
550
46
2.3
10.2
2.3
2.1
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Q
g
Q
gs
Q
gd
VGS=10V
Switching Characteristics
t
d(on)
t
r
Turn-on Delay Time
VDS= 300V
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
ID=4A,
RG=25Ω
VGS=10V
--
--
--
--
15.5
13
40
16
--
--
--
--
nS
nS
nS
nS
t
d(off)
t
f
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
V
SD
Note:
Forward on voltage
IS= 4 A,VGS=0V
--
0.8
1.4
V
A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%
B:Guranteed by design, not subject to production testing.
- 2-
2018-8-22
PTP4 N65 /PTF4 N65
65 0V/4 A
N-Channel A dv anced Power MOSFET
Typical characteristic curve:
- 3-
2018-8-22
PTP4 N65 /PTF4 N65
65 0V/4 A
N-Channel A dv anced Power MOSFET
图
7:
电容特性
图
8:
栅电荷特性
图
9:
安全工½区
图
10:
最大电流衰减
- 4-
2018-8-22
PTP4 N65 /PTF4 N65
65 0V/4 A
N-Channel A dv anced Power MOSFET
Test Circuit and Waveform
Gate Charge Test Circuit and Waveform
Switching time test circuit and waveform
Reverse Recovery Test Circuit and Waveform
Avalanche Test Circuit and Waveform
5
/
10
- 5-
2018-8-22
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