100 V/15A N-Channel Advanced Power MOSFET
PTD15N10
Features
V
DS
R
DS(on),typ@VGS=10V
R
DS(on),typ@VGS=4.5V
I
D
100
78
82
15
V
mΩ
mΩ
A
N-Channel，5V Logic Level Control
Enhancement mode
Very low on-resistance @
V
GS
=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
To-252
Maximum ratings, at
T
j=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Rating
100
±20
Unit
V
V
A
A
A
W
A
A
mJ
°C
V
(BR)DSS
V
GS
I
D
I
DM
T
C
=25°C
Continuous drain current@VGS=10V
15
9.6
40
30
15
11
9
-55 to 175
T
C
=70°C
Pulse drain current tested
①
Maximum power dissipation
Diode Continuous Forward Current
Avalanche Current Max
Avalanche energy, single pulsed
②
Storage and operating temperature range
T
C
=25°C
T
C
=25°C
P
D
I
S
IAS
EAS
T
C
=25°C
L=0.5mH
T
STG
,
T
J
Thermal characteristics
R
JA
R
JC
Thermal Resistance Junction-Ambient
Thermal Resistance-Junction to Case
60
5
°C/W
°C/W
- 1-
2015-3-26
100 V/15A N-Channel Advanced Power MOSFET
Typical
Electrical
Characteristics
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
PTD15N10
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance③
Drain-Source On-State Resistance③
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
100
--
--
--
1.0
--
--
--
--
--
--
2.0
78
82
--
1
100
±100
3.0
90
100
V
μA
μA
nA
V
mΩ
mΩ
R
DS(ON)
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=3A,
V
GS
=10V
V
DS
=30V,V
GS
=0V,
f=1MHz
--
--
--
525
41
36
2.6
--
--
--
pF
pF
pF
Ω
--
--
--
15.6
3.2
4.4
--
--
--
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
V
DD
=50V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=1A,
R
G
=6.8Ω,
V
GS
=4.5V
--
--
--
--
8
4.5
26
3.8
--
--
--
--
nS
nS
nS
nS
Source- Drain Diode Characteristics@ T
J
= 25°C (unless otherwise stated)
V
SD
t
rr
Q
rr
NOTE:
①
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=10A,V
GS
=0V
T
j
=25℃,I
sd
=10A,
V
GS
=0V
di/dt=500A/μs
--
--
0.89
26
115
1.20
--
V
nS
nC
Repetitive rating; pulse width limited by max. junction temperature
②
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.5mH,R
G
= 25
Ω
, I
AS
= 6A, V
GS
=10V. Part not recommended for use above this value.
③
Pulse width
≤
300μs; duty cycle≤ 2%.
- 2-
2015-3-26
100 V/15A N-Channel Advanced Power MOSFET
Typical Characteristics
PTD15N10
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
V
GS(TH)
Gate -Source Voltage Vs.Tj
ID, Drain-Source Current (A)
VGS, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Tj
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
- 3-
ID - Drain Current (A)
VDS, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
2015-3-26
100 V/15A N-Channel Advanced Power MOSFET
Typical Characteristics
VGS, Gate-Source Voltage (V)
VDS, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
PTD15N10
C, Capacitance (pF)
Qg, Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Unclamped Inductive Test Circuit and waveforms
Fig11.
Switching Time Test Circuit and waveforms
- 4-
2015-3-26
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