PTS4842
30V/7.7A Dual N-Channel Advanced Power MOSFET
Features
BVDSS＞30V, R
DS(ON)
=21mΩ(Typ)@V
GS
=10V
Low On-Resistance
Fast Switching
Lead-Free,Hg-Free, Green Product
Pin Description
PTS4
PTS4842 designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.
Absolute Maximum Ratings
(T
C
=25°C Unless Otherwise Noted)
Symbol
V
GS
Parameter
Gate-Source Voltage
Drain-Source Breakdown Voltage
Rating
±20
30
150
-50 to 150
T
C
=25°C
Unit
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
I
S
5
Mounted on Large Heat Sink
(Note 1)
I
DM
Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
30
7.7
A
I
D
Continuous Drain Current(V
GS
=10V)
T
C
=100°C
A
6.5
2
89
W
°C/W
P
D
R
JA
Maximum Power Dissipation
Thermal Resistance Junction-Ambient
T
C
=25°C
- 1-
2014-5-23
PTS4842
30V/7.7A Dual N-Channel Advanced Power MOSFET
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Symbol
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Condition
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=7.7A
V
GS
=5V, I
D
=5A
Min
30
--
--
1.0
--
--
Typ
--
--
--
1.6
16
20
Max
--
1
±100
2.5
21
30
Unit
V
μA
nA
V
mΩ
mΩ
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
V
DS
=15V,I
D
=4A,
V
GS
=4.5V
V
DS
=15V,V
GS
=0V,
f=1MHz
--
--
--
--
--
--
420
85
9
10.5
2.3
3
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
Turnon Delay Time
V
DD
=15V,
Turnon Rise Time
TurnOff Delay Time
TurnOff Fall Time
I
D
=3A,
R
G
=3.3Ω,
V
GS
=10V
--
--
-
--
4.5
3
12
2
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source Drain Diode Characteristics
I
SD
V
SD
Notes:
Sourcedrain current(Body Diode)
Forward on voltage
①
T
c
=25℃
T
j
=25℃,I
SD
=4A,
V
GS
=0V
.--
--
--
0.82
5
1.2
A
V
①
Pulse test ; Pulse width300s, duty cycle2%.
②
Pulse width limited by maximum allowable junction temperature
- 2-
2014-5-23
PTS4842
30V/7.7A Dual N-Channel Advanced Power MOSFET
Typical Characteristics
I
D
,Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
Ptot-Power（W）
Tj , Junction Temperature (°C)
Fig2.
Power Dissipation
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj , Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Temperature
I
D
, Drain Current (A)
V
DS
, Drain -Source Voltage (V)
Fig5.
Maximum Safe Operating Area
I
D
, Drain Current (A)
Square Wave Pulse Duration (sec)
Fig6. Thermal Transient Impedance
- 3-
2014-5-23
PTS4842
30V/7.7A Dual N-Channel Advanced Power MOSFET
Typical Characteristics
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig7.
Typical Source-Drain Diode Forward Voltage
V
GS
, Gate-Source Voltage (V)
Qg ,Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Normalized V
GS(TH)
, Gate -Source Voltage
Tj , Junction Temperature (°C)
Fig9.
Threshold Voltage Vs. Temperature
C, Capacitance (pF)
V
DS
, Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig11.
Switching Time Test Circuit and waveforms
- 4-
2014-5-23
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