PTS4936
30V/5.8 A Dual N-Channel Advanced Power MOSFET
Features
BVDSS＞30V, R
DS(ON)
=23mΩ(Typ)@V
GS
=10V
Low On-Resistance
Fast Switching
Lead-Free,Hg-Free, Green Product
Pin Description
PTS4936 designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.
Absolute Maximum Ratings
Rating
Symbol
Parameter
NMOS
Common Ratings (T
C
=25°C Unless Otherwise Noted)
V
GS
Unit
Gate-Source Voltage
Drain-Source Breakdown Voltage
±20
30
175
-50 to 150
T
C
=25°C
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
I
S
5
Mounted on Large Heat Sink
(Note 1)
I
DM
Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
20
5.8
A
I
D
Continuous Drain Current(V
GS
=10V)
T
C
=100°C
A
4.2
2
89
W
°C/W
P
D
R
JA
Maximum Power Dissipation
Thermal Resistance Junction-Ambient
T
C
=25°C
- 1-
2014-5-23
PTS4936
30V/5.8 A Dual N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min
(Note 3)
Typ
Max
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
V
GS
=0V I
D
=250μA
V
DS
=24V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=5.8A
V
GS
=4.5V, I
D
=5A
30
--
--
1.0
--
--
--
--
--
1.6
23
32
(Note 4)
--
1
±100
2.5
31
43
V
μA
nA
V
mΩ
mΩ
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
(Note 4)
--
V
DS
=15V,V
GS
=0V,
f=1MHz
--
--
--
V
DS
=15V,I
D
=5A,
V
GS
=10V
--
--
255
45
35
5.2
0.85
1.3
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
Turnon Delay Time
Turnon Rise Time
TurnOff Delay Time
TurnOff Fall Time
V
DD
=15V, R
L
=3 Ω
V
GS
=10V, R
GS
=3 Ω
--
--
-
--
4.5
2.5
14.5
3.5
--
--
--
--
ns
ns
ns
ns
t
r
t
d(off)
t
f
Source Drain Diode Characteristics
(Note 2)
I
SD
V
SD
Notes:
Sourcedrain current(Body Diode)
Forward on voltage
(Note 3)
T
c
=25℃
T
j
=25℃,I
SD
=3A,
V
GS
=0V
5
--
--
0.82
--
1.3
A
V
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
- 2-
2014-5-23
PTS4936
30V/5.8 A Dual N-Channel Advanced Power MOSFET
Rdson On-Resistance(mΩ)
P
D
Power(W)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Power Dissipation
I
s
- Reverse Drain Current (A)
Figure7 Rdson vs Vgs
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
C Capacitance (pF)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Figure 12 Safe Operation Area
- 4-
2014-5-23
PTS4936
30V/5.8 A Dual N-Channel Advanced Power MOSFET
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
- 5-
2014-5-23
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
