PTS4803
-30V/-5.8A Dual P-Channel Advanced Power MOSFET
Features
•
Low R
DS(on)
@V
GS
=-5V
• 5V Logic Level Control
• Dual P-Channel SOP8 Package
• Pb−Free, RoHS Compliant
Applications
The PTS4803 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in
PWM applications, optimized for Power Management
applications
for Portable Products, such as H-bridge,
Inverters Car Charger
and Others
Order Information
Product
PTS4803
Package
SOP8
Marking
PTS4803
Packing
Key Items
BVDSS
ID
R
DSON1@Vgs=-4.5V
R
DSON2@vgs=-2.5V
PMOS
-30
-5.8
50
70
Unit
V
A
mΩ
mΩ
Min Unit Quantity
3000PCS
3000PCS/Reel
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above
the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
①
±12
-30
175
-50 to 150
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
I
S
T
C
=25°C
-5.8
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested
②
T
C
=25°C
T
C
=25°C
-22
-5.8
A
I
D
P
D
R
JA
Continuous Drain Current(V
GS
=10V)
A
T
C
=100°C
Maximum Power Dissipation
Thermal Resistance Junction-Ambient
-5
2
89
W
°C/W
T
C
=25°C
CopyrightPuolop Electronics Co., Ltd
Rev B– Jun.30
th
, 2016
Page 1 ,Total 1
www.puolop.com
Rev. Rev
PTS4803
-30V/-5.8A Dual P-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
=0V I
D
=-250μA
V
DS
=-30V,V
GS
=0V
-30
--
--
--
--
1
V
μA
I
DSS
(Tc=25℃)
Zero Gate Voltage Drain Current
(Tc=125℃)
V
DS
=-30V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V,I
D
=-5A
V
GS
=-2.5V,I
D
=-3A
--
--
-0.6
--
--
--
--
-0.9
50
70
100
±100
-1.5
60
85
μA
nA
V
mΩ
mΩ
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-15I
D
=-3A,
V
GS
=-4.5V
V
DS
=-15V
GS
=0V,
f=1MHz
--
--
--
--
--
--
480
90
50
12
3.5
2.8
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=-20V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=-6A,
R
G
=3.3Ω,
V
GS
=-4.5V
--
--
--
--
8
5
22
8.5
--
--
--
--
ns
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics
I
SD
V
SD
Notes:
Source-drain current(Body Diode)
Forward on voltage
T
c
=25℃
T
j
=25℃,I
SD
=-4A
V
GS
=0V
-3
--
--
-0.8
-1.2
A
V
①
Pulse test ; Pulse width300s, duty cycle2%.
②
Pulse width limited by maximum allowable junction temperature.
CopyrightPuolop Electronics Co., Ltd
Rev B– Jun.30
th
, 2016
Page 2 ,Total 2
www.puolop.com
Rev. Rev
PTS4803
-30V/-5.8A Dual P-Channel Advanced Power MOSFET
P-Channel Typical
Characteristics
CopyrightPuolop Electronics Co., Ltd
Rev B– Jun.30
th
, 2016
Page 3 ,Total 3
www.puolop.com
Rev. Rev
PTS4803
-30V/-5.8A Dual P-Channel Advanced Power MOSFET
P-Channel Typical Characteristics
CopyrightPuolop Electronics Co., Ltd
Rev B– Jun.30
th
, 2016
Page 4 ,Total 4
www.puolop.com
Rev. Rev
PTS4803
-30V/-5.8A Dual P-Channel Advanced Power MOSFET
Package Out Line Dimensions
Reflow soldering footprint for SOP8
Customer Service
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
Mail:Sales@vgsemi.com
WEB: www.puolop.com
CopyrightPuolop Electronics Co., Ltd
Rev B– Jun.30
th
, 2016
Page 5 ,Total 5
www.puolop.com
Rev. Rev
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