PT8810
Dual N-Channel MOSFET
DESCRIPTION
The PT8810 uses advanced trench technology to provide excellent
R
DS(ON)
and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
Features
V
DS
(V) = 20V
I
D
=
6A
(V
GS
= 10V)
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
R
DS(ON)
< 30mΩ (V
GS
= 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
D1/D2
G2
S1
D1/D2
S2
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V
DS
V
GS
I
D
I
DM
*
R
θJA
T
j
T
stg
T
L
Value
20
±10
7
25
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
- 1-
2016-3-8
PT8810
T
a
=25
unless otherwise specified
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 1)
Drain-source on-resistance
(note 1)
Forward tranconductance
(note 1)
Diode forward voltage(note
1)
DYNAMIC PARAMETERS
(note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note
2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Notes :
1.
2.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
Guaranteed by design, not subject to production testing.
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V,V
DD
=10V,
R
L
=1.5Ω,R
GEN
=3Ω
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
6
13
52
16
ns
ns
ns
ns
V
DS
=10V,V
GS
=4.5V,I
D
=6A
V
DS
=10V,V
GS
=0V,f =1MHz
V
(BR) DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=16V,V
GS
= 0V
V
GS
=±10V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=6 A
V
GS
=2.5V, I
D
=5.5A
V
DS
=5V, I
D
=7A
I
S
=1.5A,
GS
= 0V
1150
185
145
15
0.8
3.2
pF
pF
pF
nC
nC
nC
9
1.2
0.5
20
1
±10
1.0
22
30
V
µA
µA
V
mΩ
m
Ω
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
- 2-
2016-3-8
嵌入式系统
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