PT9435
-30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-5.3A = 60mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.2A = 95m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.17
6.20
5.00
4.00
8°
1.27
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.31
0.51
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75
o
C
P
D
T
J
, T
stg
R
θJC
2)
-30
± 20
-5.3
-20
2.5
1.2
-55 to 150
24
62.5
o
V
A
W
o
C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
R
θ
JA
C/W
- 1-
2016-9-9
PT9435
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
1)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
Symbol
Test Condition
Min.
-30
Typ.
Max.
Unit
V
BV
DSS
V
GS
= 0V, I
D
= -250uA
R
DS(on)
V
GS
= -4.5V, I
D
= -4.2A
R
DS(on)
V
GS
= -10V, I
D
= -5.3A
V
GS(th)
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
V
SD
I
S
= -2.6A, V
GS
= 0V
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= ± 16V, V
DS
= 0V
V
DS
= -10V, I
D
= -5.3A
70.0
50.0
-1
95.0
60.0
-3
1
±100
mΩ
V
uA
nA
S
10
9.35
3.43
1.7
10.8
2.33
22.53
3.87
551.57
90.96
60.79
-2.6
-1.3
V
DS
=-15V, I
D
= -5.3A
V
GS
= -10V
V
DD
= -15V,
R
L
= 15Ω
I
D
= -1A,
R
G
= 6Ω
V
DS
= -15V, V
GS
= 0V
f = 1.0 MHz
V
GEN
= -10V
nC
ns
pF
A
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
- 2-
2016-9-9
微控制器 MCU
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