PTLC03D-B – ESD Protection Diode
Feature
350 Watts peak pulse power (8/20s)
Bidirectional configurations
Protect one power line
Solid state silicon-avalanche technology
Low operating voltage
Low leakage current
Low Capacitance: 1.0 pF Typical
IEC61000-4-2 (ESD)
±30kV
(Air),
±30kV
(Contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Lightning): 20A (8/20s)
Applications
Ethernet - 10/100/1000 Base T
Cellular Phones
Handheld - Wireless Systems
Personal Digital Assistant (PDA)
USB Interface
Mechanical Data
SOD323 package
Molding compound flammability rating: UL94 V-0
Tape and Reel Packaging
RoHS/WEEE Compliant
Schematic and PIN Configuration
Maximum Rating
Parameter
IEC61000-4-2 ESD Voltage – Air Mode
IEC61000-4-2 ESD Voltage – Contact Mode
Peak Pulse Power
Peak Pulse Current
Maximum Lead Solder Temperature (10 seconds duration)
Junction Temperature
Storage Temperature Range
Note:
1.
2.
3.
Device stressed with ten non-repetitive ESD pulses.
Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5.
All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted.
Symbol
V
ESD(1)
P
PP(2)
I
PP(2)
Limit
±30
±30
350
20
260
-55~150
-55~150
Unit
kV
W
A
°C
°C
°C
T
L
T
J
T
stg
新竹市科學工業園區工業東四路
24-1
號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 1 of 4
2018/08/09
Rev: C
PTLC03D-B – ESD Protection Diode
Electrical Characteristics
Parameter
Reverse Stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Note:
1.
2.
3.
Other voltages available upon request.
Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5.
All ratings are measured at environmental temperature of T
A
= 25°C unless otherwise noted.
Symbol
V
RWM(1)
V
BR
I
R
V
C(2)
C
J
Test Conditions
I
T
= 1mA
V
RWM
= 3.3V
I
PP
= 20A
V
R
= 0V, f = 1MHz
Min
4.0
Typ
Max
3.3
1
18
Unit
V
V
A
V
pF
1.0
1.5
Electrical Parameters
Symbol
V
C
I
PP
V
BR
I
T
I
R
V
RWM
Parameter
Clamping Voltage @ I
PP
Reverse Peak Pulse Current
Breakdown Voltage @ I
T
Test Current
Reverse Leakage Current @ V
RWM
Working Peak Reverse Voltage
新竹市科學工業園區工業東四路
24-1
號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 2 of 4
2018/08/09
Rev: C
PTLC03D-B – ESD Protection Diode
Typical Characteristics
新竹市科學工業園區工業東四路
24-1
號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 3 of 4
2018/08/09
Rev: C
PTLC03D-B – ESD Protection Diode
SOD323 Package Outline Dimensions
Symbol
A
B
C
D
E
F
L
L1
H
Dimensions (mm)
Min
1.600
0.250
2.500
1.200
0.080
0.250
Max
1.800
0.350
2.700
1.000
1.400
0.150
0.400
0.100
Dimensions (inch)
Min
0.063
0.010
0.098
0.047
0.003
0.010
Max
0.071
0.014
0.106
0.039
0.055
0.006
0.016
0.004
0.475 Ref.
0.019 Ref.
Marking
Packaging Information
Order Code
PTLC03D-B
Packaging
SOD323
Reel Size
7 inch
PCS/Reel
3,000
新竹市科學工業園區工業東四路
24-1
號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 4 of 4
2018/08/09
Rev: C
微控制器 MCU
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