PTP09N90
PTA09N90
900V N-Channel MOSFET
General Features
Proprietary New Planar Technology
R
DS(ON),typ.
=1.2 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
900V
R
DS(ON),typ.
1.2Ω
I
D
9A
Applications
Adaptor Charger
SMPS Power Supply
LCD Panel Power
Ordering Information
Part Number
PTP09N90
PTA09N90
Package
TO-220
TO-220F
Brand
Symbol
V
DSS
V
GSS
I
D
I
D @ Tc =100
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ Tc=100
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
PTP09N90
900
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTP09N90
0.60
62
PTA09N90
1.86
/W
100
Unit
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
300
260
℃
208
1.67
℃
℃
Absolute Maximum Ratings
T
C
=25
unless otherwise specified
PTA09N90
Unit
V
±30
9.0
Figure 3
Figure 6
580
1000
67
0.54
A
mJ
V/ns
W
W/
℃
℃
℃
℃
℃
℃
Page 1 / 9
Rev. B.2016
PTP09N90
PTA09N90
Electrical Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source Breakdown Voltage
I
DSS
Drain-to-Source Leakage Current
--
--
--
--
--
100
+100
V
GS
=+30V, V
DS
=0V
nA
V
GS
=-30V, V
DS
=0V
unless otherwise specified
I
GSS
Gate-to-Source Leakage Current
--
-100
Symbol
R
DS(ON)
V
GS(TH)
gfs
Rg
Parameter
Static Drain-to-Source
On-Resistance
[4]
Gate Threshold Voltage
Forward Transconductance
[4]
Gate Resistance
Min.
--
2.0
--
--
Typ.
1.2
--
9.2
1.4
Max.
1.4
4.0
--
--
Unit
Ω
V
S
Ω
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
2593
12
146
49
13
17
Max.
Unit
--
--
--
--
--
--
--
--
--
--
--
--
Essentially independent of operating temperature
pF
nC
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
35
41
134
45
Max.
Unit
--
--
--
--
--
--
nS
V
DD
=450V,
I
D
=9A,
V
GS
= 10V
R
G
=25 Ω
--
--
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
ON Characteristics
T
J
=25
Test Conditions
V
GS
=10V, I
D
=4.8A
V
DS
=V
GS
, I
D
=250uA
VDS=30V,ID=5A
Vds=0V,F=1MHz
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
V
DD
=450V,
I
D
=9A, V
GS
=0 to 10V
Test Conditions
℃
℃
OFF Characteristics
T
J
=25
unless otherwise specified
Min.
900
--
Typ.
--
--
Max.
--
1
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=900V, V
GS
=0V
uA
V
DS
=720V, V
GS
=0V,
T
J
=125
Page 2 / 9
Rev. B.2016
PTP09N90
PTA09N90
Symbol
I
SD
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
Min
--
--
--
--
--
Typ.
--
--
--
562
3.5
Note:
[1] T
J
=+25 to +150
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 9A di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150 .
[4] Pulse width≤380µs; duty cycle≤2%.
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
Source-Drain Body Diode Characteristics
T
J
=25
unless otherwise specified
Max.
9
36
1.5
--
--
Unit
A
V
ns
uC
Test Conditions
Integral PN-diode in
MOSFET
I
S
=9A, V
GS
=0V
V
GS
=0V ,I
F
=9A,
di
F
/dt=100A/μs
℃
℃
℃
Page 3 / 9
Rev. B.2016
PTP09N90
PTA09N90
Typical Characteristics
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev. B.2016
PTP09N90
PTA09N90
Typical Characteristics
(Cont.)
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev. B.2016
stm32/stm8
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