PSP06N70
PSA06N70
700V N-ch Planar MOSFET
General Features
RoHS Compliant
R
DS(ON),typ.
=1.35 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
700V
R
DS(ON),typ.
1.35Ω
I
D
6.0A
Applications
Adaptor
Charger
SMPS Standby Power
G
D
S
TO-220
G
D
S
TO-220F
Ordering Information
Part Number
PSP06N70
PSA06N70
Package
TO-220
TO-220F
Brand
Package No to Scale
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
Derating Factor above 25℃
T
L
T
J
& T
STG
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
T
C
=25℃ unless otherwise specified
PSP06N70
700
PSA06N70
Unit
V
±
30
6.0
A
24
185
5.0
100
0.8
300
℃
-55 to 150
33
0.26
mJ
V/ns
W
W/℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PSP06N70
1.25
62
PSA06N70
3.79
℃/W
100
Unit
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 1 / 9
Rev. B. 2018
PSP06N70
PSA06N70
Electrical Characteristics
OFF Characteristics
Symbol
BV
DSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
--
--
I
GSS
Gate-to-Source Leakage Current
--
--
--
--
100
+100
-100
nA
Min.
700
--
Typ.
--
--
--
1
uA
T
J
=25℃ unless otherwise specified
Max.
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=700V, V
GS
=0V
V
DS
=560V, V
GS
=0V,
T
J
=125℃
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Min.
--
2.0
--
Typ.
1.35
--
5.0
1.6
4.0
--
T
J
=25℃ unless otherwise specified
Max.
Unit
Ω
V
S
Test Conditions
V
GS
=10V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
VDS=15V,ID=3A
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
R
g
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
938
8.2
87.8
1.3
23.5
4.5
9.2
Max.
Unit
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
V
ds
=0V,F=1MHz
--
--
--
--
--
--
--
--
--
--
--
--
--
--
nC
V
DD
=350V,
I
D
=6A, V
GS
=0 to 10V
Ω
pF
Resistive Switching Characteristics
Symbol
td
(ON)
t
rise
td
(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min.
Typ.
14.7
26
68.4
34.6
Max.
Unit
Test Conditions
--
--
--
--
--
--
ns
V
DD
=350V,
I
D
=6A,
V
GS
=10V
Rg=25 Ω
--
--
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 2 / 9
Rev. B. 2018
PSP06N70
PSA06N70
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
[2]
Pulsed Source Current
[2]
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
=25℃ unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
--
195
887
Max.
6.0
24
1.5
--
--
Unit
A
V
ns
nC
Test Conditions
Integral pn-diode
in MOSFET
I
S
=6A, V
GS
=0V
V
GS
=0V
I
F
=6A, di/dt=100A/μs
Note:
[1] T
J
=+25℃ to +150℃
[2] Pulse width≤380µs; duty cycle≤2%.
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 3 / 9
Rev. B. 2018
PSP06N70
PSA06N70
Typical Characteristics
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev. B. 2018
PSP06N70
PSA06N70
Typical Characteristics
(Cont.)
©2018 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev. B. 2018
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