PTP08N06N
Pb
Applications:
Lead Free Package and Finish
Power Supply
• Adaptor
Converters
DC-DC
• Charger
• SMPS Standby Power
V
DSS
V
DSS
60V
650V
R
DS(ON)
(MAX)
R
DS(ON)
(Typ.)
8m
1.1
7.0 A
I
D
a
I
D
110A
Features:
• RoHS Compliant
Lead
Resistance
• Low ON
Free
Low R
Charge
• Low Gate
DS(ON)
to Minimize Conductive Loss
• Peak Current
Charge for Fast Switching Application
Low Gate
vs Pulse Width Curve
• ESD improved Capability
Optimized B
VDSS
Capability
G
DS
Ordering Information
Part Number
Package
TO-220
Brand
TO-220
Package Not
to Scale
Absolute Maximum Ratings
Symbol
V
DSS
I
D
a
I
DM
P
D
V
GS
E
AS
T
C
=25
Parameter
unless otherwise specified
Value
60
110
439
156
1.04
+/-20
00
Figure 9
-55 to 175
Unit
V
A
W
W/
V
mJ
A
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current @V
G
=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche Energy
(L=1mH)
Pulsed Avalanche Energy
I
AS
T
J
and T
STG
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
R
JC
Parameter
Junction-to-Case
Min
Typ Max Unit
Test Conditions
Water cooled heatsink, P
D
/W adjusted for a peak junction
Temperature of 175
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175
. Package limitation current is 80A.
7
1
B
7
7
PTP08N06N
OFF Characteristics
Symbol
B
VDSS
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Parameter
T
J
=25 unless otherwise specified
Min
Typ
Max
Unit
60
V
1
100
100
100
uA
nA
V
GS
=0V, I
D
=250uA
V
DS
=48V, V
GS
=0V
V
GS
=+20V
V
GS
= -20V
Test Conditions
V
DS
=48V, V
GS
=0V, T
J
=125
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Static Drain-to-Source On-Resistanc
Gate Threshold Voltage.
Parameter
T
J
=25 unless otherwise specified
Min
Typ
Max
Unit
6.5
2
8
4
m
V
V
GS
=10V, I
D
=24A
V
GS
=V
DS
, I
D
=250uA
Test Conditions
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-in Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Parameter
Essentially independent of operating temperature
Test Conditions
Min
Typ
Max
Unit
3396
435
151
51
22
15
14
44
31
12
pF
V
GS
=0V, V
DS
=55V,
f=1.0MHz
V
DD
=30V, I
D
=55A, V
GS
=10V
nC
nS
V
DD
=30V, I
D
=55A, V
G
=10V,
R
G
=2.5
Source-Drain Diode Characteristics
T
J
=25
Symbol
V
SD
Trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
unless otherwise specified
Min
Typ
Max
Unit
1.2
V
Test Conditions
I
S
=24A, V
GS
=0V
78.5
112.0
nS
nC
Is=38A, di/dt=100A/ s
7
2
B
7
7
PTP08N06N
160
P
D
, Power Dissipation(W)
120
I
D
, Drain Current(A)
100
80
60
40
20
0
0
25
50
75
100 125 150 175
)
140
120
100
80
60
40
20
0
T
C
, Case Temperature(
0
25
50
75
100 125 150 175
)
T
C
, Case Temperature(
120
I
D
, Drain Current(A)
Drain-to-Source Breakdown
Voltage (Normalized)
100
80
60
40
20
0
0
0.5
1
V
GS
=10,9 V
V
GS
=8V
1.18
1.13
1.08
1.03
0.98
0.93
0.88
I
D
=5mA
V
GS
=7V
1.5
2
-75
-25
25
75
125
175
VDS, Drain-to Source Voltage(A)
T
J
, Junction Temperature( )
1.40
1.00
0.80
0.60
0.40
0.20
0.00
-75
-25
25
75
125
)
R
DS(ON)
, Drain-to-Source
Resistance (Normalized)
V
th
, Threshold Voltage
(Normalized)
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-75
-25
25
75
125
)
3
B
7
7
1.20
175
175
T
J
, Junction Temperature(
7
T
J
, Junction Temperature(
PTP08N06N
10
VGS. Gate-to-Source Voltage(V)
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
QG, Gate Charge(nC)
50
60
C, Capacitance(pF)
5000
4000
3000
2000
1000
0
0
15
30
45
VDS, Drain Voltage(V)
60
C
ISS
C
OSS
C
RSS
1000
100
IAS, Avalanche Current(A)
Starting T
J
=25
100
I
SD
, Reverse Drain Current(A)
10
T
J
=25
T
J
=175
10
1
1
1.E-05
1.E-04
0
V
GS
=0
0.00
0.40
0.80
V
SD
, Source-to-Drain Voltage(V)
1.20
tAV, Time in Avalanche(s)
1.E-03
1.E-02
1.E-01
7
4
B
7
7
PTP08N06N
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
7
©
5
B
7
7
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