PTW50N20
200V N-Channel MOSFET
General Features
Proprietary New Planar Technology
R
DS(ON),typ.
=40m Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
200V
R
DS(ON),typ.
40mΩ
I
D
50A
Applications
Adaptor
TV Main Power
SMPS Power Supply
LCD Panel Power
Ordering Information
Part Number
PTW50N20
Package
TO-3P
Brand
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
D @ Tc =100
℃
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ Tc=100℃
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25℃
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
T
C
=25℃ unless otherwise specified
PTW50N20
200
±
20
50
Figure 3
Figure 6
3000
5.0
300
2.0
300
260
-55 to 150
Unit
V
A
mJ
V/ns
W
W/℃
℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTW50N20
0.5
℃/W
45
Unit
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 1 / 9
Rev. B.2017
PTW50N20
Electrical Characteristics
OFF Characteristics
Symbol
BV
DSS
T
J
=25℃ unless otherwise specified
Parameter
Drain-to-Source Breakdown Voltage
Min.
200
--
Typ.
--
--
--
--
--
Max.
--
1
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=200V, V
GS
=0V
I
DSS
Drain-to-Source Leakage Current
--
--
100
+100
uA
V
DS
=160V, V
GS
=0V,
T
J
=125℃
V
GS
=+20V, V
DS
=0V
nA
V
GS
=-20V, V
DS
=0V
I
GSS
Gate-to-Source Leakage Current
--
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
[4]
Gate Threshold Voltage
Forward Transconductance
[4]
Min.
--
2.0
--
Typ.
40
--
65
50
4.0
--
T
J
=25℃ unless otherwise specified
Max.
Unit
mΩ
V
S
Test Conditions
V
GS
=10V, I
D
=20A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V,I
D
=28A
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
3700
420
660
210
21
98
Max.
Unit
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
--
--
--
--
--
--
--
--
--
--
--
--
Essentially independent of operating temperature
pF
nC
V
DD
=100V,
I
D
=28A, V
GS
=0 to 10V
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
35
35
80
20
Max.
Unit
Test Conditions
--
--
--
--
--
--
nS
V
DD
=100V,
I
D
=28A,
V
GS
= 10V
R
G
=1.8 Ω
--
--
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 2 / 9
Rev. B.2017
PTW50N20
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
T
J
=25℃ unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
--
385
0.8
Max.
50
200
1.5
--
--
Unit
A
V
ns
uC
Test Conditions
Integral PN-diode in
MOSFET
I
S
=28A, V
GS
=0V
V
GS
=0V ,I
F
=28A,
di
F
/dt=100A/μs
Note:
[1] T
J
=+25℃ to +150℃
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 28A di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150℃.
[4] Pulse width≤380µs; duty cycle≤2%.
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 3 / 9
Rev. B.2017
PTW50N20
Typical Characteristics
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev. B.2017
PTW50N20
Typical Characteristics
(Cont.)
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev. B.2017
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
