PTP13N60
PTA13N60
600V N-Channel MOSFET
General Features
Proprietary New Planar Technology
R
DS(ON),typ.
=0.45 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
600V
R
DS(ON),typ.
0.45 Ω
I
D
13A
Applications
Adaptor
TV Main Power
SMPS Power Supply
LCD Panel Power
Ordering Information
Part Number
PTP13N60
PTA13N60
Package
TO-220
TO-220F
Brand
Symbol
V
DSS
V
GSS
I
D
I
D @ Tc =100
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ Tc=100
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
PTP13N60
600
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTP13N60
1.0
62
PTA13N60
2.5
/W
100
Unit
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
300
260
Rev. B .2014
℃
125
1.0
℃
℃
Absolute Maximum Ratings
T
C
=25
unless otherwise specified
PTA13N60
Unit
V
±30
13
Figure 3
Figure 6
1000
5.0
50
0.4
A
mJ
V/ns
W
W/
℃
℃
℃
℃
℃
℃
Page 1 / 9
PTP13N60
PTA13N60
Electrical Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source Breakdown Voltage
I
DSS
Drain-to-Source Leakage Current
--
--
--
--
--
100
+100
V
GS
=+30V, V
DS
=0V
nA
V
GS
=-30V, V
DS
=0V
unless otherwise specified
I
GSS
Gate-to-Source Leakage Current
--
-100
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
[4]
Gate Threshold Voltage
Forward Transconductance
[4]
Min.
--
2.0
--
Typ.
0.45
--
19
Max.
0.60
4.0
--
Unit
Ω
V
S
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
2120
23
190
46
10
18
Max.
2544
27
228
56
Unit
--
--
--
--
--
--
pF
--
--
nC
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
16
26
54
38
Essentially independent of operating temperature
Max.
Unit
--
--
--
--
--
--
nS
V
DD
=300V,
I
D
=13A,
V
GS
= 10V
R
G
=9.1 Ω
--
--
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
ON Characteristics
T
J
=25
Test Conditions
V
GS
=10V, I
D
=6.5A
V
DS
=V
GS
, I
D
=250uA
VDS=30V,ID=13A
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
V
DD
=300V,
I
D
=13A, V
GS
=0 to 10V
Test Conditions
℃
℃
OFF Characteristics
T
J
=25
unless otherwise specified
Min.
600
--
Typ.
--
--
Max.
--
1
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=600V, V
GS
=0V
uA
V
DS
=480V, V
GS
=0V,
T
J
=125
Page 2 / 9
Rev. B .2014
PTP13N60
PTA13N60
Symbol
I
SD
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
Min
--
--
--
--
--
Typ.
--
--
--
--
--
Note:
[1] T
J
=+25 to +150
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 13A di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150 .
[4] Pulse width≤380µs; duty cycle≤2%.
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
Source-Drain Body Diode Characteristics
T
J
=25
unless otherwise specified
Max.
13
52
1.5
574
4.5
Unit
A
V
ns
uC
Test Conditions
Integral PN-diode in
MOSFET
I
S
=13A, V
GS
=0V
V
GS
=0V ,I
F
=13A,
di
F
/dt=100A/μs
℃
℃
℃
Page 3 / 9
Rev. B .2014
PTP13N60
PTA13N60
Typical Characteristics
..
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev. B .2014
PTP13N60
PTA13N60
Typical Characteristics
(Cont.)
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev. B .2014
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