PTP16N60
PTA16N60
600V N-Channel MOSFET
General Features
Proprietary New Planar Technology
R
DS(ON),typ.
=0.41
Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
600V
R
DS(ON),typ.
0.41Ω
I
D
16A
Applications
Adaptor Charger
SMPS Power Supply
LCD Panel Power
Ordering Information
Part Number
PTP16N60
PTA16N60
Package
TO-220
TO-220F
Brand
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
D @ Tc =100
℃
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ Tc=100℃
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
T
C
=25℃ unless otherwise specified
PTP16N60
600
±30
16
11.5
64
1000
5.0
180
1.11
300
260
PTA16N60
Unit
V
A
mJ
V/ns
60
0.48
W
W/℃
Power Dissipation
Derating Factor above 25℃
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
℃
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTP16N60
0.69
62
PTA16N60
2.08
℃/W
100
Unit
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP .
Page 1 / 9
Rev. A.2014
PTP16N60
PTA16N60
Electrical Characteristics
OFF Characteristics
Symbol
BV
DSS
T
J
=25℃ unless otherwise specified
Parameter
Drain-to-Source Breakdown Voltage
Min.
600
--
Typ.
--
--
--
--
--
Max.
--
10
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V,
T
J
=125℃
I
DSS
Drain-to-Source Leakage Current
--
Gate-to-Source Leakage Current
--
--
100
+100
-100
uA
I
GSS
nA
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
[4]
Gate Threshold Voltage
Forward Transconductance
[4]
Min.
--
2.0
--
Typ.
0.41
--
15
0.50
4.0
--
T
J
=25℃ unless otherwise specified
Max.
Unit
Ω
V
S
Test Conditions
V
GS
=10V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V,I
D
=8A
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
2442
18.5
218
54
12
21
Max.
Unit
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
--
--
--
--
--
--
--
--
--
--
--
--
nC
pF
V
DD
=300V,
I
D
=16A, V
GS
=0 to 10V
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
15
52
59
72
Essentially independent of operating temperature
Max.
Unit
Test Conditions
--
--
--
--
--
--
--
--
nS
V
DD
=300V,
I
D
=16A,
V
GS
= 10V
R
G
=6.1
Ω
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP .
Page 2 / 9
Rev. A.2014
PTP16N60
PTA16N60
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
T
J
=25℃ unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
--
380
2.6
Max.
16
64
1.5
--
--
Unit
A
V
ns
uC
Test Conditions
Integral PN-diode in
MOSFET
I
S
=16A, V
GS
=0V
V
GS
=0V ,I
F
=16A,
di
F
/dt=100A/μs
Note:
[1] T
J
=+25℃ to +150℃
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 16A di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150℃.
[4] Pulse width≤380µs; duty cycle≤2%.
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP .
Page 3 / 9
Rev. A.2014
PTP16N60
PTA16N60
Typical Characteristics
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP .
Page 4 / 9
Rev. A.2014
PTP16N60
PTA16N60
Typical Characteristics
(Cont.)
©2014 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP .
Page 5 / 9
Rev. A.2014
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