TP08N65
TA08N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Power Supply
• LCD Panel Power
Pb
Lead Free Package and Finish
R
DS(ON)
(Typ.)
0.85
I
D
8A
V
DSS
650 V
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
D
G
G
D
S
G
TO-220
D
S
TO-220F
Ordering Information
PART NUMBER
08N65
08N65
PACKAGE
TO-220
TO-220F
BRAND
S
Packages
Not to Scale
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
D
@ 100 C
I
DM
P
D
V
GS
E
AS
I
AS
dv/dt
T
L
T
PKG
T
J
and T
STG
o
T
C
=25
o
C unless otherwise specified
08N6
5
(NOTE *1)
8.0
Figure 3
(NOTE *2)
120
o
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, V
GS
@ 10V
Power Dissipation
Derating Factor above 25 C
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
08N6
5
8.0*
Units
V
A
650
Figure 6
42
0.34
± 30
450
Figure 8
5.0
300
260
-55 to 150
W
W/ C
V
mJ
A
V/ns
o
0.96
o
C
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resist nce
a
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient
08N6
5
1.04
62
08N6
5
2.98
Units
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
o
justed for a peak junction temperature of +150 C.
1 cubic foot chamber, free air.
o
100
C/W
1
OFF Characteristics
Symbol
BV
DSS
BV
DSS
/ T
J
TJ=25 C unless otherwise specified
Parameter
Min.
650
--
--
o
Typ.
--
0.50
Max.
--
--
1.0
Units
V
V/ C
o
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25 C,
I
D
=250μA
V
DS
=650V, V
GS
=0V
o
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11.
--
--
--
--
I
DSS
Drain-to-Source Leakage Current
--
250
100
-100
μA
V
DS
=520V, V
GS
=0V
o
T
J
=125 C
V
GS
=+30V
V
GS
= -30V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
--
--
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
TJ=25
o
C unless otherwise specified
Parameter
Min.
--
2.0
--
Typ.
0.85
--
10
Max.
1.3
4.0
--
Units
Test Conditions
V
GS
=10V, I
D
=4.0A
(NOTE *4)
V
DS
=V
GS
, I
D
=250 A
V
DS
=20V, I
D
=8A
(NOTE *4)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
Forward Transconductance
V
S
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Essentially independent of operating temperature
Parameter
Min.
--
--
--
--
--
--
Typ.
1240
110
14
28
5.6
11.2
Max.
--
--
--
--
--
--
Units
Test Conditions
V
GS
=0V
V
DS
=25V
f =1.0MHz
Figure 14
VDD=325V
ID=8A
Vgs=10V
Figure 15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
pF
nC
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min.
--
--
--
--
Parameter
Turn-on Delay Time
Typ.
13
15
40
22
Max.
--
--
--
--
Units
Test Conditions
V
DD
=325V
I
D
=8A
V
GS
=10V
R
G
=9.1
ns
2
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Tc=25 C unless otherwise specified
Min.
--
--
--
--
--
o
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ.
--
--
--
555
3.4
Max.
8
32
1.5
--
--
Units
A
A
V
ns
uC
Test Conditions
Integral pn-diode
in MOSFET
I
S
=8A, V
GS
=0V
V
GS
=0V,VDD=60V
I
F
=8A, di/dt=100 A/μs
Notes:
*1. TJ = +25
o
C to +150
o
C.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. I
SD
= 8 A, di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150
o
C.
*4. Pulse width < 380μs; duty cycle < 2%.
3
Duty Factor
1.000
50%
20%
10%
5%
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Thermal Impedance
(Normalized)
0.100
2%
0.010
1%
P
DM
t
1
t
2
0.001
single pulse
0.0001
1E-6
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x Z JC x R JC+TC
Z
JC
,
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
t
p
, Rectangular Pulse Duration (s)
Figure 2.
Maximum Power Dissipation
vs Case Temperature
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
9.0
7.5
6.0
4.5
3.0
1.5
175
P
D
, Power Dissipation (W)
105
TO-220
70
35
TO-220F
I
D
, Drain Current (A)
140
0
25
50
75
100
125
150
0
25
50
75
100
o
125
150
T
C
, Case Temperature (
o
C)
T
C
, Case Temperature ( C)
Figure 4. Typical Output Characteristics
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
2.0
17.5
PULSE DURATION = 250 μS
DUTY FACTOR = 0.5%
MAX, T
C
= 25
o
C
14.0
10.5
V
GS
= 6.5V
V
GS
= 6.0V
RDS(ON), Drain-to-Source
ON Resistance (
V
G
15V
S
=
PULSE DURATION = 10 μS
DUTY FACTOR = 0.5% MAX
T
C
= 25
o
C
I
D
, Drain Current (A)
1.5
I
D
= 16A
I
D
= 8A
I
D
= 4A
I
D
= 2A
V
GS
= 5.5V
7.0
V
GS
= 5.0V
1.0
3.5
V
GS
= 4.5V
0
0
5
10
15
20
25
30
0.5
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage ( V)
V
GS
, Gate-to-Source Voltage (V)
4
Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
DM
, Peak Current (A)
I
=
I
25
150
–
T C
----------------------
125
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
t
p
, Pulse Width (s)
Figure 7. Typical Transfer Characteristics
25
100
Figure 8.
Unclamped Inductive
Switching Capability
I
D
, Drain-to-Source Current (A)
20
I
AS
, Avalanche Current (A)
PULSE DURATION = 380 μs
DUTY CYCLE = 0.5% MAX
VDS = 30 V
10
STARTING TJ = 150
o
C
STARTING TJ = 25
o
C
15
10
+150
o
C
+25
o
C
-55
o
C
1
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
5
R equals total Series resistance of Drain circuit
0
7
4
5
6
7
0.1
1E-6
10E-6
100E-6
1E-3
10E-3
V
GS
, Gate-to-Source Voltage (V)
t
AV
, Time in Avalanche (s)
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
1.1
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
TC=25°C
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
3.00
R
DS(ON)
, Drain-to-Source
ON Resistance ( )
0.9
0.8
V
= 10V
GS
Resistance (Normalized)
1.0
RDS(ON), Drain-to-Source
2.75
2.25
1.75
1.25
0.75
0.25
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 4 A
0.7
0.6
0.5
0
5
10
15
20
25
30
-75
-50
-25
0
25
50
75
100
125
150
I
D
, Drain Current (A)
T
J
, Junction Temperature (
o
C)
5
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