47N60YS
47 Amps,600 Volts N-Channel Super Junction Power MOSFET
FEATURE
47A,600V,R
DS(ON)MAX
=90mΩ@V
GS
=10V/15.6A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-247
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
T
J
,T
STG
T
L
47N60YS
600
±20
47
132
720
-55 to +150
260
10
1.1
UNIT
V
A
mJ
℃
℃
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
thJC
T
C
=25℃
P
D
47N60YS
0.68
183
Units
℃/W
W
Maximum Junction-to-Case
Maximum Power Dissipation
Version1.0-2015.2
www.perfectway.cn
Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
V
GS
=0V,I
D
=250uA,T
C
=25℃
V
GS
=0V,I
D
=250uA,T
C
=125℃
V
DS
=600V,V
GS
=0V
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=15.6A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Min
600
－
－
－
－
2
－
Typ
－
700
－
－
－
Max
－
－
1
100
-100
4
90
－
－
－
μA
nA
nA
V
mΩ
pF
pF
pF
Units
V
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Diode Forward
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Current
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
I
S
I
SM
V
SD
t
rr
Q
rr
I
S
=20A,V
GS
=0V
V
GS
=0V,I
S
=20A,
dI
F
/dt=100A/us, (Note3)
V
DS
=480V,I
D
=20A,
V
GS
=10V, (Note3,4)
V
DD
=300V,I
D
=20A,
R
G
=25Ω
(Note3,4)
－
－
－
－
－
－
－
45.5
120.6
137
116.2
88
21.7
41
－
－
－
947.1
6.8
－
－
－
－
－
－
－
47
132
1.5
－
－
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
C
iss
C
oss
C
rss
－
－
－
3112
2399
62
V
GS(th)
R
DS(on)
－
68
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Body Diode Charcteristics and Maximum Ratings
－
－
－
－
－
Pulsed Diode Forward Current
Notes
1.
2.
3.
4.
Repetitive Rating:pulse width limited by maximum junction temperature.
L=10mH,R
g
=25Ω,I
AS
=12A ,starting T
J
=25℃.
dI/dt=200A/us,starting T
J
=25℃.Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
Version1.0-2015.2
www.perfectway.cn
TEST CIRCUIT AND WAVEFORM
Version1.0-2015.2
www.perfectway.cn
Version1.0-2015.2
www.perfectway.cn
RATINGAND CHARACTERISTIC CURVES
60
I
D
,Drain-to-Source Current(A)
15V TOP
14V
13V
12V
11V
10V
9V
12
V
GS
,Gate-to-Source Voltage(V)
50
40
30
20
10
0
10
8
6
4
2
0
V
DS
=480V
8V
T
J
=25℃
7V
6V
5V
0
5
10
15
20
25
V
DS
,Drain-to-Source Voltage(V)
30
0
15
30
45
60
75
Q
g
,Total Gate Charge(nC)
90
100
I
SD
, Reverse Drain Current(A)
100000
Capacitance(pF)
10
T
J
=150℃
T
J
=25℃
10000
C
oss
1000
1
100
C
iss
C
rss
10
100
V
DS
,Drain-to-Source Voltage(V)
I
D
=15.6
A
1
1000
V
GS
=0
V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
,Source-Drain Voltage(V)
1.4
10
0.1
800
R
DS(on)
,Drain-to-Source
On Resistance (Normalized)
3
2.5
2
1.5
1
0.5
0
750
V
DS
, Drain-to-Source
Brakdown Voltage(V)
700
650
600
550
500
-60 -40 -20 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
V
GS
=10
V
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
Version1.0-2015.2
www.perfectway.cn
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