4N65TF
4 Amps,650 Volts N-CHANNEL MOSFET
FEATURE
4A,650V,R
DS(ON)MAX
=2.6Ω@V
GS
=10V/2A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220TF
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
T
J
,T
STG
T
L
4N65TF
650
±30
4
16
150
2.63
-55 to +150
260
10
1.1
UNIT
V
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
thJC
T
C
=25℃
P
D
MAX
3.47
34
Units
℃/W
W
Maximum Junction-to-Case
Maximum Power Dissipation
1
Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
Test Conditions
V
GS
=0V,I
D
=250uA
Reference to 25℃，
I
D
=250uA
V
DS
=650V,V
GS
=0V
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=2A
Min
650
－
－
－
－
2
－
Typ
－
0.67
－
－
－
Max
－
－
10
100
-100
4
2.6
Units
V
V/℃
μA
nA
nA
V
Ω
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulse width tp≤380µs,δ≤2%
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
SD
t
rr
Q
rr
I
S
=4A,V
GS
=0V
V
GS
=0V,I
S
=4A,Tj=25℃
dI
F
/dt=100A/us
(Note3)
V
DS
=325V,I
D
=4A,
V
GS
=10V
(Note3,4)
V
DD
=325V,I
D
=4A,
R
G
=10Ω
－
－
－
－
－
－
－
10
11
31
16
14.5
3
6
－
320
2.0
－
－
－
－
－
－
－
1.5
－
－
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
C
iss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
－
－
－
425
55
5.8
－
－
－
pF
pF
pF
－
2.1
(Note3,4)
Drain-Source Body Diode Charcteristics and Maximum Ratings
－
－
－
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature .
2. V
DD
=50V,starling,L=18.8mH,R
g
=25Ω,I
AS
=4A , T
J
=25℃.
3. dI/dt=_A/us,starting T
J
=25℃.Pulse width≤300us;duty cycle≤2%.
4.
Repetitive rating; pulse width limited by maximum junction temperature.
2
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