12N65(F,B,H)
12 Amps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,R
DS(ON)
=0.65Ω@V
GS
=10V/6A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
12N65
ITO-220AB
12N65F
TO-263
12N65B
TO-262
12N65H
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
J
,T
STG
T
L
12N65(F,B,H)
650
±30
12
48
900
12
33
5.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
thJC
T
C
=25℃
P
D
ITO-220
3.0
55
TO-220
2.0
140
TO-262
TO-263
2.0
140
Units
℃/W
W
Maximum Junction-to-Case
Maximum Power Dissipation
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Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Conditions
V
GS
=0V,I
D
=250uA
Reference to 25℃,
I
D
=250uA
V
DS
=650V,V
GS
=0V
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
V
DS
=10V,I
D
=250uA
V
GS
=10V,I
D
=6A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Min
650
-
-
-
-
Typ
Max
Units
V
V/℃
μA
μA
μA
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Diode Forward
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Current
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
I
S
I
SM
V
SD
t
rr
Q
rr
I
S
=12A,V
GS
=0V
V
GS
=0V,I
S
=12A,
dI
F
/dt=100A/us,
(Note4)
V
DS
=480V,I
D
=12A,
V
GS
=10V, (Note4,5)
V
DD
=300V,I
D
=12A,
R
G
=4.7Ω
(Note4,5)
-
-
-
-
-
-
-
20
28
55
30
58
14
32
-
-
-
-
-
-
-
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
-
-
-
2107
195
16
-
-
-
pF
pF
pF
2
-
-
0.65
4
0.7
V
Ω
-
0.6
-
-
-
-
-
1
10
-10
Drain-Source Body Diode Charcteristics and Maximum Ratings
-
-
-
-
-
-
-
-
600
43
12
48
1.5
-
-
Pulsed Diode Forward Current
Notes
1.
2.
3.
4.
5.
Repetitive Rating:pulse width limited by maximum junction temperature.
V
DD
=50V,L=12.5mH,R
g
=25Ω,I
AS
=12A , starling T
J
=25℃.
I
SD
≤I
D
,dI/dt=200A/us,V
DD
≤BV
DSS
,starting T
J
=25℃.
Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
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RATINGAND CHARACTERISTIC CURVES
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RATINGAND CHARACTERISTIC CURVES
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