8N06(G,D)
7.5 Amps,60 Volts N-CHANNEL MOSFET
FEATURE
7.5A,60V,R
DS(ON)MAX
=82mΩ@V
GS
=10V/4A
R
DS(ON)MAX
=107mΩ@V
GS
=4.5V/4A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-252
8N06G
TO-251
8N06D
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
T
J
,T
STG
T
L
8N06(G,D)
60
±20
7.5
11
25
-55to+150
260
UNIT
V
A
mJ
℃
℃
Thermal
Parameter
Characteristics
Symbol
R
th(J-c)
T
C
=25℃
P
D
8N06G/D
9.2
13.5
Units
℃/W
W
Thermal resistance , Junction to Case
Maximum Power Dissipation
Version1.0-2015.2
www.perfectway.cn
Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
R
DS(on)
C
iss
C
oss
C
rss
Test Conditions
Min
Typ
－
－
－
－
－
71
92
505
30
20
Max
－
1
100
-100
2.5
82
107
－
－
－
Units
V
uA
nA
nA
V
mΩ
Off C
haracteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
V
GS
=0V,I
D
=250uA
V
DS
=60V,V
GS
=0V
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=4A
V
GS
=4.5V,I
D
=4A
V
DS
=30V,V
GS
=0V,
f=1.0MHZ
60
－
－
－
1.0
－
－
－
－
－
On C
haracteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic C
haracteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
pF
pF
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Diode Forward
Diode Forward Voltage
Current
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
I
S
I
SM
V
SD
I
S
=7.5A,V
GS
=0V
V
DS
=30V,I
D
=5A,
V
GS
=10V, (Note3,4)
V
DD
=30V,I
D
=5A,
R
G
=3Ω(Note3,4)
－
－
－
－
－
－
－
－
－
－
7.5
4.5
22.5
9
11
4
3.5
－
－
－
－
－
－
－
－
－
－
8
11
1.2
ns
ns
ns
ns
nC
nC
nC
Drain-Source Body Diode Charcteristics and Maximum Ratings
A
A
V
Pulsed Diode Forward Current
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature .
2. L=0.5mH,R
g
=25Ω,I
AS
=10A , T
J
=25℃.
3. I
SD
≤I
D
,dI/dt=100A/us,V
DD
≤BV
DSS
,starting T
J
=25℃,Pulse width≤300us;duty cycle≤2%.
4.
Repetitive rating; pulse width limited by maximum junction temperature.
Version1.0-2015.2
www.perfectway.cn
Test Circuit and Waveform
Version1.0-2015.2
www.perfectway.cn
Version1.0-2015.2
www.perfectway.cn
RATINGAND CHARACTERISTIC CURVES
20
I
D
,Drain-to-Source Current(A)
10V TOP
9V
8V
7V
6V
6V
5V
10
V
GS
,Gate-to-Source Voltage(V)
VDS=30V
ID=5A
15
8
6
4
2
0
4.5V
10
4V
5
T
J
=25℃
0
4
2
3
0
1
V
DS
,Drain-to-Source Voltage(V)
3V
5
0
5
10
Q
g
,Total Gate Charge(nC)
15
100
I
SD
, Reverse Drain Current(A)
600
500
Capacitance(pF)
C
iss
10
T
J
=150℃
T
J
=25℃
400
300
200
100
C
oss
C
rss
0
5
10
15
20
25
V
DS
,Drain-to-Source Voltage(V)
I
D
=4
A
30
1
V
GS
=0
V
0.1
0.2
0.4 0.6 0.8 1.0 1.2
V
DS
,Source-Drain Voltage(V)
1.4
0
240
R
DS(on)
,Drain-to-Source
On Resistance (Normalized)
12
2.5
2.0
1.5
1.0
0.5
0
200
V
DS
, Drain-to-Source
Brakdown Voltage(V)
160
120
80
40
0
V
GS
=10
V
V
GS
=4.5
V
-60 -40 -20 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
Version1.0-2015.2
www.perfectway.cn
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