S5P6R 规格书
S5P6R
5.0AMPS. PLANAR MOS SCHOTTKY BARRIER RECTIFIERS
FEATURE
.For
surface mounted application
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge current capability
.High
temperature soldering guaranteed
260℃/10 seconds at terminals.
.For
surface mounted application
.Easy
pick and place
SMF
.096(2.45)
.108(2.75)
.051(1.3)
.059(1.5)
MECHANICAL DATA
.Terminal:
Solder plated
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy（free halogen）
.Polarity:
color band denotes cathode
.Packaging:12mm
tape per EIA STD RS-481
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
.043(1.1)
.059(1.5)
.016(0.40)
.028(0.70)
.028(0.70)
.047(1.20)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
atrated DCblockingvoltage
@T
J
=25°C
@T
J
=100°C
SYM
BOL
S5P6R
60
42
60
5.0
120.0
0.52
0.2
10.0
400
55
20
-55 to +150
-55 to +150
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F Max
I
R
C
J
R
(JA)
R
(JC)
T
STG
T
J
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Storage Temperature
Operating Junction Temperature
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Measured on P.C.Board with 0.2×0.2”(5.0×5.0mm)Copper Pad Areas.
1
.006(0.15)
.010(0.25)
.173(4.40)
.189(4.80)
.132(3.35)
.144(3.65)
units
V
V
V
A
A
V
mA
pF
°C/W
°C
°C
S5P6R 规格书
RATING AND CHARACTERISTIC CURVES (S5P6R)
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
5.0
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
AVERGE FORWARD
RECTIFIED CURRENT,(A)
2.5
Single Phase Half Wave
60Hz Resistive or
inductive Load
0
0
50
100
150
200
INSTANEOUS FORWARD
CURRENT,(A)
T
J
=25
℃
Pulse Width=300
μ
s 1% Duty Cycle
.1
LEAD TEMPERTURE,(
℃
)
INSTANEOUS FORWARD
VOLTAGE,(V)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
.3
.5
.7
.9
FIG.3-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
10
160
PEAK FORWARD SURGE
CURRENT,(A)
INSTANEOUS REVERSE
CURRENT,(mA)
120
8.3ms Single Half
Sine-Wave (JEDEC
Method)
1.0
80
TJ=25
℃
.1
40
0
1
10
100
.01
0
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
2
FPGA/CPLD
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