D882
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q,
P and E, according to its DC current gain.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Peak Collector Current (t = 10 ms)
Total power dissipation (T
a
= 25
O
C)
Total power dissipation (T
c
= 25
O
C)
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 2 V, I
C
= 20 mA
at V
CE
= 2 V, I
C
= 1 A Current Gain Group
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
30
60
100
160
200
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
120
200
320
400
1
1
0.5
2
-
-
Unit
-
-
-
-
-
µA
µA
V
V
MHz
pF
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
tot
P
tot
T
j
T
stg
Value
40
30
5
3
7
1
10
150
- 55 to + 150
Unit
V
V
V
A
A
W
W
O
C
C
O
R
O
Y
GR
Collector Base Cutoff Current
at V
CB
= 30 V
Emitter Base Cutoff Current
at V
EB
= 3 V
Collector Emitter Saturation Voltage
at I
C
= 2 A, I
B
= 0.2 A
Base Emitter Saturation Voltage
at I
C
= 2 A, I
B
= 0.2 A
Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 0.1 A
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
2012-7-8
- 1-
D882
TYPICAL CHARACTERISTICS (Ta=25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NOTE
1.Aluminum heat sink
of 1.0 mm thickness.
2.With no insulator film.
3.With silicon compound.
o
DERATING CURVES FOR ALL TYPES
THERMAL RESISTANCE vs.
PULSE WIDTH
V
CE
=10V
I
C
=1.0A
30 Duty=0.001
10
P
T
-Total Power Dissipation-W
100
dT-Percentage of Rated Current-%
8
6
100
cm
2
80
ite
d
Rth-Thermal Resistance-
o
C/W
S/b
Lim
10
3
In
ite
fin
he
at
nk
si
n
io
at
ip
ss
Di
60
40
d
ite
m
Li
4
1
0.3
25c
m
9cm
2
2
2
Without
heat sin
k
20
0
0
50
100
150
T
a
-Ambient Temperature -
o
C
0.1
0
50
100
150
0.3
1
3
10
30
100 300
1000
PW-Pulse Width-mS
Tc-Case Temperature -
o
C
SAFE OPERATING AREAS
10
3
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
1000
Pulse Test
10
9
8
7
6
5
0.8
4
3
0.4
2
300
h
FE
-DC Current Gain
DC CURRENT GAIN, BASE TO EMITTER
VOLTAGE vs. COLLECTOR CURRENT
V
CE
=2.0V
Pulse Test
h
FE
100
60
30
3
1.6
I
C
-Collector Current-A
IC-Collector Current-A
1
0.3
1.2
V
CEO
MAX.
0.1
0.03
NOTE
1.T
C
=25
o
C
2.Curves must be derated
Iinearly with increase of
temperature and Duty Cycle.
10
6
3
V
BE
1
0.6
0.3
I
B
=1mA
1
0.001 0.003 0.01 0.03 0.1 0.3
4
8
12
16
20
I
C
-Collector Current-A
o
V
CE
-Collector to Emitter Voltage-V
0.01
1
3
6
10
30
60
100
V
CE
-Collector to Emitter Voltage-V
0
1
3
10
0.1
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10
V
BE(sat)
-Base Saturation Voltage-v
V
CE(sat)
-Collector Saturation Voltage-V
GAIN BANDWIDTH PRODUCT vs.
COLLCETOR CURRENT
1000
300
V
CE
=5.0V
Forced air
cooling
(with heat sink)
C
ib
-Input Capacitance-pF
C
ob
-Output Capacitance-pF
INPUT AND OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
f=1.0MHz
I
E
=0(C
ob
)
I
C
=0(C
ib
)
C
ib
100
60
30
C
ob
3
1
0.6
0.3
0.1
0.06
0.03
0.01
0.006
0.003
0.001 0.003 0.01 0.03 0.1 0.3
V
CE(sat)
V
BE(sat)
I
C
=10.I
B
Pulse Test
f
T
-Gain Bandwidth Product-MHz
300
100
30
10
3
10
6
3
1
3
10
1
0.01
0.03
0.1
0.3
1
1
3
6
10
30
60
I
C
-Collcetor Current-A
V
CB
-Collector to Base Voltage-V
V
EB
-Emitter to Base Voltage-V
I
C
-Collector Current-A
V
BE
-Base Emitter Voltage-V
I
C
(pulse) MAX.(PW 10ms,Duty Cycle 50%)
PW
1m
10
s
=1
I
C
(DC) MAX.
ms
00
DC
s
Di
ss
(S
ip
ing
at
L
io
le
S/
n
no imit
b
ed
nr
Li
ep
m
et
it e
iti
d
ve
pu
lse
)
-2 -
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