MMBT5401
TRANSISTOR(PNP)
FEATURES
Complementary to MMBT5551
Ideal for Medium Power Amplification and Switching
SOT-23 Plastic Package
MARKING: 2L
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.6
300
416
150
-55½+150
Unit
V
V
V
A
mW
℃/W
℃
℃
Characteristics at T
a
= 25
O
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
f
T
C
ob
Test
I
C
=1mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
=-120 V , I
E
=0
V
EB
=-4V ,
V
CE
= -5V,
V
CE
= -5V,
V
CE
= -5V,
I
C
=0
I
C
= -1mA
I
C
=
=-10mA
I
C
=-50mA
=
80
100
50
-0.5
-1
1
100
300
6
V
V
V
MHz
pF
300
conditions
Min
-160
-150
-5
-0.1
-0.1
Typ
Max
Unit
V
V
V
I
C
=100µA, I
E
=0
μ
A
uA
I
C
=-50 mA, I
B
= -5mA
I
C
= -50 mA, I
B
= -5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V,I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz