MMBT3906
TRANSISTOR(PNP)
FEATURES
Complementary Type The
NPN
Transistor
MMBT3904 is
R
ecommended
Epitaxial
Planar Die Construction
(3)C
SOT-23
MARKING: 2A
1. BASE
2
A
(1)B
(2)E
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Value
-40
-40
-5
-200
200
625
150
-55
~
+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
Test
conditions
Min
-40
-40
-5
-0.1
-50
-0.1
100
60
30
-0.3
-0.95
300
35
35
225
75
V
V
MHz
nS
nS
nS
nS
300
Max
Unit
V
V
V
μA
nA
μA
V
(BR)
CBO
I
C
=-10μA, I
E
=0
V
(BR)
CEO
I
C
=-1mA, I
B
=0
V
(BR)
EBO
I
E
=-10μA, I
C
=0
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
CB
=-40V, I
E
=0
V
CE
=-30V,V
BE(off)
=-3V
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
= -50mA
V
CE
=-1V, I
C
= -100mA
I
C
=-50mA, I
B
= -5mA
I
C
= -50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA,
f=
100MHz
V
CC
=-3V,V
BE
=-0.5V
I
C
=-10mA, I
B1
=-I
B2
=-1mA
V
CC
=-3V,I
C
=-10mA,
I
B1
=-I
B2
=-1mA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
f
T
t
d
t
r
t
s
t
f
h
FE(1)
O
100-200
CLASSIFICATION OF
Rank
Range
Y
200-300
１
MMBT3906
-100
Static Characteristic
-500uA
-450uA
-400uA
-350uA
COMMON
EMITTER
Ta=25
℃
300
h
FE
——
I
C
COMMON EMITTER
VCE=-1V
COLLECTOR CURRENT I
C
(mA)
Ta=100
℃
-80
DC CURRENT GAIN h
FE
200
-60
-300uA
-250uA
Ta=25
℃
-40
-200uA
-150uA
100
-20
-100uA
I
B
=-50uA
-0
-0
-4
-8
-12
-16
-20
0
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-500
V
CEsat
——
I
C
-1.2
V
BEsat
——
I
C
-300
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
Ta=25
℃
-0.8
Ta=100
℃
-100
Ta=25
℃
Ta=100
℃
-0.4
-30
β=10
-10
-1
-3
-10
-30
-100
-200
-0.0
-1
-3
-10
-30
-100
β=10
-300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
COMMON EMITTER
VCE=-1V
——
V
BE
9
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
Ta=25
℃
COLLECTOR CURRENT I
C
(mA)
-30
Cob
-10
CAPACITANCE C (pF)
Ta=100
℃
Cib
3
-3
Ta=25
℃
-1
-0.3
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-0.3
-1
-3
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
600
f
T
——
I
C
VCE=-20V
o
Ta=25 C
300
Pc
——
Ta
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR POWER DISSIPATION
Pc (mW)
-1
-10
250
400
200
150
100
50
200
-3
-30
-50
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta
(
℃
)
２
Microchip MCU
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