KIA
SEMICONDUCTORS
9.0A,200V
N-CHANNEL MOSFET
KNX4820B
`
1.
Description
The KNX4820B-Channel enhancement mode silicon gate power MOSFET is designed for high voltage,
high speed power switching applications such as high efficiency switched mode power supplies, active
power factor correction, electronic lamp ballasts based on half bridge topology
2.
Features
n
n
n
n
Proprietary New Planar Technology
RDS(ON),typ.=250m
Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of
8
Rev 1.0 Jan. 2018
KIA
SEMICONDUCTORS
9.0A,200V
N-CHANNEL MOSFET
KNX4820B
`
4.
Ordering Information
Part Number
KNU4820B
KND4820B
Package
TO-251
TO-252
Brand
KIA
KIA
5.
Absolute maximum ratings
TC=25℃ unless otherwise specified
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at VGS=10V
Single Pulse Avalanche Energy
Power Dissipation
Derating Factor above 25℃
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and StorageTemperatureRange
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
L
T
J
& T
STG
Ratings
TO251/TO252
200
±20
9.0
36
300
83
0.59
300
Unit
V
A
mJ
W
W/
ºC
ºC
-55 to 150
Caution: Stresses greater than those listed in the
“Absolute
Maximum Ratings” may cause permanent
damage to the device.
6.
Thermal characteristics
Ratings
TO251
TO252
75
1.5
Parameter
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Units
ºC/W
2 of 8
Rev 1.0 Jan. 2018
KIA
SEMICONDUCTORS
9.0A,200V
N-CHANNEL MOSFET
KNX4820B
`
7.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Symbol
BV
DSS
I
DSS
Gate-body leakage current
On characteristics
Static drain-source on-resistance
Gate threshold voltage
Forward Transconductance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
[2]
Pulsed drain-source current
[2]
Reverse recovery time
Reverse recovery charge
Note: [1] TJ=+25
ºC
to +150
ºC
[2] Pulse width≤380μs; duty cycle≤2%.
R
DS(on)
V
GS(th)
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
SD
I
SM
t
rr
Q
rr
V
GS
=10V,I
D
=4.5A
V
GS
=4.5V, I
D
=4.5A
V
DS
=V
GS
, I
D
=250μA
V
DS
=20V,I
D
=9A
V
DS
=25V,V
GS
=0V,
f=1MHz
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
270
-
9.0
418
94
55
7.0
6.0
20
6.0
28
12
2.0
-
-
-
238
1.0
300
320
3.0
-
-
-
-
-
-
-
-
-
-
-
1.5
9
36
-
-
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
I
GSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250μA
V
DS
=200V ,V
GS
=0V
V
DS
=160 V
GS
=0V
T
C
=125ºC,
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
200
-
-
-
-
-
-
-
-
-
-
1
10
+100
-100
V
μA
μA
nA
nA
V
DD
=100V,I
D
=9.0A,
V
GS
=10V,R
G
=12Ω
V
DD
=100V,I
D
=9.0A ,
V
GS
=0 to10V
V
GS
=0V,I
s
=9.0A
Integral pn-diode
In MOSFET
V
GS
=0V,I
F
=9.0A
d
IF
/dt=100A/μs
3 of 8
Rev 1.0 Jan. 2018
KIA
SEMICONDUCTORS
9.0A,200V
N-CHANNEL MOSFET
KNX4820B
`
8.
Typical Characteristics
4 of 8
Rev 1.0 Jan. 2018
KIA
SEMICONDUCTORS
9.0A,200V
N-CHANNEL MOSFET
KNX4820B
`
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Rev 1.0 Jan. 2018