KIA
SEMICONDUCTORS
10A，650V
N-CHANNEL MOSFET
10N65H
1.Description
The KIA10N65H N-Channel enhancement mode silicon gate power MOSFET is designed
for high voltage, high speed power switching applications such as high efficiency switched mode power
supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology.
2.
Features
n
n
n
n
n
R
DS(on)
=0.65Ω @ V
GS
=10V
Low gate charge ( typical 48nC)
Fast switching capability
avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
10A，650V
N-CHANNEL MOSFET
10N65H
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
Drain current pulsed (note1)
I
DP
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Peak diode recovery dv/dt (note3)
dv/dt
T
C
=25 ºC
Total power dissipation
P
D
derate above 25 ºC
Junction temperature
T
J
Storage temperature
T
STG
* Drain current limited by maximum junction temperature.
(TC= 25 ºC , unless otherwise specified)
Units
Rating
V
650
V
+30
10.0*
A
6.0*
A
A
40.0*
mJ
16.2
mJ
709
V/ns
4.5
W
52
0.42
W/ºC
+150
ºC
-55~+150
ºC
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
R
thJA
R
thCS
R
thJC
Rating
62.5
-
2.4
Unit
ºC/W
ºC/W
ºC/W
2 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
10A，650V
N-CHANNEL MOSFET
10N65H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Unit
V
GS
=0V,I
D
=250μA
V
DS
=650V ,V
GS
=0V
V
DS
=480V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=5.0A
V
DS
=25V,V
GS
=0V,
f=1MHz
650
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
0.65
1650
1665
18
25
70
140
80
48
7.0
18.0
-
-
-
430
4.3
-
1
10
100
-100
-
4.0
0.75
-
-
-
-
-
-
-
-
-
-
1.4
10.0
40.0
-
-
V
μA
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
V
GS(th)
Static drain-source on-resistance
R
DS(on)
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
SD
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
DD
=325V,I
D
=10.0A,
R
G
=25Ω (note4,5)
V
DS
=520V,I
D
=10.0A ,
V
GS
=10V (note4,5)
V
GS
=0V,I
SD
=10.0A
I
SD
=10.0A
dl
SD
/dt=100A/μs
(note4)
Note:1.repetitive rating:pulse width limited by maximum junctio/n temperature
2.L=13mH,I
AS
=10.0A,V
DD
=50V,R
G
=25Ω,staring T
J
=25ºC
3.I
SD
<10.0,di/dt<200A/μs,V
DD
<BV
DSS
,staring T
J
=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
10A，650V
N-CHANNEL MOSFET
10N65H
7.Test
circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
10A，650V
N-CHANNEL MOSFET
10N65H
5 of 5
Rev 1.1 JAN 2014
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