KIA
SEMICONDUCTORS
50A 30V
N-CHANNEL MOSFET
KIA50N03B
1.
Features
n
n
n
Advanced trench process technology
High density cell design for ultra low on-resistance
Fully characterized avalanche voltage and current
2.
Features
n
n
n
n
n
50A, 30V, R
DS
(on) typ. = 6.5mΩ(typ.)@V
GS
= 10 V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 Sep 2019
KIA
SEMICONDUCTORS
50A 30V
N-CHANNEL MOSFET
KIA50N03B
4.
Ordering Information
Part Number
KIA50N03BD
Package
TO-252
Brand
KIA
5.
Absolute maximum ratings
(T
C
= 25ºC , unless otherwise noted)
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
J
,T
STG
Parameter
Drain-Source Voltage
Drain Current -Continuous (T
C
= 25
ºC)
-Continuous (T
C
= 100
ºC)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Value
30
50
30
200
±20
85
60
0.5
-55 to +150
Units
V
A
A
A
V
mJ
W
W/ºC
ºC
(Note 1)
Power Dissipation (T
C
= 25
ºC)
-Derate above 25
ºC
Operating and Storage Temperature Range
6.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
1.8
62
Units
ºC
/W
ºC
/W
2 of 5
Rev 1.1 Sep 2019
KIA
SEMICONDUCTORS
50A 30V
N-CHANNEL MOSFET
KIA50N03B
7.
Electrical characteristics
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
R
G
C
iss
C
oss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V, I
D
= 15A,
V
GS
= 10 V
(Note 2,3)
V
DD
= 20 V,V
GS
=10V,
I
D
= 15 A, R
G
= 6
Ω
(Note2.3)
(T
C
= 25ºC , unless otherwise noted)
Test Conditions
Min Typ
Max
V
GS
= 0 V, I
D
= 250 uA
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 uA
V
GS
= 10 V, I
D
= 15 A
f = 1.0 MHz
30
--
--
1.0
--
--
--
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1.6
6.5
5.0
1200
150
115
4.6
35
40
16
25
5.0
5.5
--
--
--
12.5
0.005
--
1
±100
3.0
9.9
--
--
--
--
--
--
--
--
--
--
--
50
200
1.5
--
--
Units
V
uA
nA
V
mΩ
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
uC
Off Characteristics
On Characteristics
Dynamic Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
Integral Reverse P-N
I
S
Continuous Source Current
Junction Diode in the
I
SM
Pulsed Source Current
MOSFET
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
=15 A
t
rr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 15 A,
dI
F
/ dt = 100 A/us
(Note 2)
Notes:
1. L = 0.5mH, V
DD
= 15V,
V
GS
= 10V,
R
G
= 25Ω, Starting T
J
= 25°C
2. Pulse Test : Pulse width
≤
300us, Duty cycle
≤
2%
3. Essentially independent of operating temperature
3 of 5
Rev 1.1 Sep 2019
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