KIA
SEMICONDUCTORS
5.8A,700V
N-CHANNEL MOSFET
6N70H
1.Description
This Power MOSFET is produced using KIA’s advanced planar stripe DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switched mode power supplies, active power factor correction
based on half bridge topology.
2.
Features
n
n
n
n
n
n
R
DS(on) typ
=1.8Ω @ V
GS
=10V
Low gate charge (typical 16nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
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Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
5.8A,700V
N-CHANNEL MOSFET
6N70H
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
(note1)
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
(T
C
=25ºC , unless otherwise noted)
Rating
Units
To251 To252 TO220F
V
700
5.8*
A
3.0*
A
A
20*
±30
V
150
mJ
4.8
A
mJ
9.5
4.5
V/ns
95
48
W
0.76
0.38
W/ºC
-55~+150
ºC
300
ºC
Drain current pulsed
Gate-source voltage
Single Pulse avalanche energy
(note2)
Avalanche current
(note1)
Repetitive avalanche energy
(note1)
Peak diode recovery dv/dt
(note3)
T
C
=25ºC
Power dissipation
Derate above 25ºC
Operating and storage temperature range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Rating
To251/To252
1.3
50
110
TO220F
2.6
--
62.5
Parameter
Thermal resistance junction-case
Thermal resistance,case-to-sink typ.
Thermal resistance junction-ambient
Symbol
R
thJC
R
thJS
R
thJA
Unit
ºC/W
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Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
5.8A,700V
N-CHANNEL MOSFET
6N70H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Breakdow voltage temperature
coefficient
Zero gate voltage drain current
Gate-body leakage current
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
Continuous drain-source current
Pulsed drain-source current
Drain-source diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
SM
V
SD
t
RR
Q
RR
-
-
-
-
-
-
-
-
280
2.0
4.8
20
1.4
-
-
A
A
V
ns
μC
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DD
=350V,R
G
=25Ω,
I
D
=6.0A (note4,5)
-
-
-
-
-
-
-
30
40
80
40
16
4.5
5.0
-
-
-
-
-
-
-
ns
ns
ns
ns
nC
nC
nC
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=2.4A
2.0
-
-
-
-
-
1.8
650
95
10
4.0
2.3
-
-
-
V
Ω
pF
pF
pF
Forward
Reverse
BV
DSS
△BV
DSS
△T
J
I
DSS
I
GSS
V
GS
=0V,I
D
=250μA
I
D
=250μA,
Referenced to 25ºC
V
DS
=700V,V
GS
=0V
V
DS
=560V,T
C
=125ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
700
-
-
-
-
-
-
0.7
-
-
-
-
-
-
1
10
100
-100
V
V/ºC
μA
μA
nA
nA
Symbol
(T
J
=25°C,unless otherwise noted)
Test Conditions
Min
Typ Max Units
V
DS
=25V,V
GS
=0V,
f=1MH
Z
V
DS
=560V,V
GS
=10V
I
D
=6.0A (note4,5)
V
GS
=0V,I
S
=4.8A
V
GS
=0V,I
S
=6.0A,
di
F
/dt=100A/μs (note 4)
Note:1. Repetitive rating: pulse width limited by maximum junction temperature
2. L=8mH, I
AS
=6.0A, V
DD
=50V, R
G
=25Ω, starting T
J
=25ºC
3. I
SD
<4.8A,di/dt <200A/μs, V
DD
<BV
DSS
, starting T
J
=25ºC
4. Pulse test: pulse width <300μs, duty cycle<2%
5. Essentially independent of operating temperature
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Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
5.8A,700V
N-CHANNEL MOSFET
6N70H
7.Test
circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
5.8A,700V
N-CHANNEL MOSFET
6N70H
5 of 5
Rev 1.1 JAN 2014
嵌入式系统
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