KIA
SEMICONDUCTORS
20A，500V
N-CHANNEL MOSFET
20N50H
1.Description
The KIA20N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as high efficiency switched mode power supplies,
active power factor correction.
2.
Features
n
n
n
n
n
R
DS(on)
=0.21Ω @ V
GS
=10V
Low gate charge ( typical 70nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
20A，500V
N-CHANNEL MOSFET
20N50H
4.
Absolute maximum ratings
(T
C
= 25 ºC , unless otherwise specified)
Ratings
Units
TO220F TO247
TO3P
V
500
V
+30
20.0
A
13.0
13
*
13.0
A
A
80
80
*
80
mJ
28
28
3.8
mJ
1110
V/ns
4.5
W
280
41.5
280
2.3
0.33
2.3
W/ºC
+150
ºC
-55~+150
ºC
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
Drain current pulsed (note1)
I
DP
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Peak diode recovery dv/dt (note 3)
dv/dt
T
C
=25ºC
Total power dissipation
P
D
derate above 25ºC
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Ratings
TO247
40
0.24
0.44
Parameter
Thermal resistance,junction-ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
R
thJA
R
thCS
R
thJC
TO220F
62.5
--
3.3
TO3P
40
0.24
0.44
Units
ºC/W
2 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
20A，500V
N-CHANNEL MOSFET
20N50H
(T
J
=25°C,unless otherwise specified)
Conditions
Min Typ
Max Units
V
GS
=0V,I
D
=250μA
V
DS
=500V ,V
GS
=0V
V
DS
=400V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=10.0A
V
DS
=25V,V
GS
=0V,
f=1MHz
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
-
0.21
2700
400
40
100
400
100
100
70
18
35
-
-
-
500
7.2
-
1
10
100
-100
-
4.0
0.26
-
-
-
-
-
-
-
-
-
-
1.5
20.0
80.0
-
-
V
μA
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
Forward
I
GSS
Reverse
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
V
GS(th)
Static drain-source on-resistance
R
DS(on)
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
SD
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
DD
=250V,I
D
=20.0A,
R
G
=25Ω (note4,5)
V
DS
=400V,I
D
=20.0A ,
V
GS
=10V (note4,5)
V
GS
=0V,I
D
=20.0A
I
SD
=20.0A
dl
SD
/dt=100A/μs
(note4)
Note:1Repetitive rating:pulse width limited by maximum junction temperature
2.L=5.0mH,I
AS
=20.0A,V
DD
=50V,R
G
=25Ω,staring T
J
=25ºC
3.I
SD
<20.0A,di/dt<200A/μs,V
DD
<BV
DSS
,staring T
J
=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
20A，500V
N-CHANNEL MOSFET
20N50H
7.Test
circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
20A，500V
N-CHANNEL MOSFET
20N50H
5 of 5
Rev 1.1 JAN 2014
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
