KIA
SEMICONDUCTORS
10A，800V
N-CHANNEL MOSFET
10N80H
1.
Description
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This
advanced has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power supplies, active power factor correction based on
half bridge topology.
2.
Features
n
n
n
n
n
n
n
R
DS(on)
=0.85Ω @ V
GS
=10V
Low gate charge ( typical 63nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
ESD improved capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.2 Jul. 2016
KIA
SEMICONDUCTORS
10A，800V
N-CHANNEL MOSFET
10N80H
4.
Absolute maximum ratings
(T
C
= 25
ºC
, unless otherwise specified)
Ratings
Units
TO-220F
TO-3P
V
800
V
+25
10*
10
A
6*
6
A
A
40
mJ
30.5
mJ
350
V/ns
4.5
W
42
305
0.34
2.44
W/
º
C
+150
ºC
-55~+150
ºC
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
Drain current pulsed (note1)
I
DP
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Peak diode recovery dv/dt (note 3)
dv/dt
T
C
=25ºC
Total power dissipation
P
D
derate above 25ºC
Junction temperature
T
J
Storage temperature
T
STG
* Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Ratings
TO-220F
62.5
-
2.95
0.4
Parameter
Thermal resistance,junction-ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
R
thJA
R
thCS
R
thJC
TO-3P
Units
ºC/W
2 of 5
Rev 1.2 Jul. 2016
KIA
SEMICONDUCTORS
10A，800V
N-CHANNEL MOSFET
10N80H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
(T
J
=25°C,unless otherwise specified)
Conditions
Min Typ
Max Units
V
GS
=0V,I
D
=250μA
V
DS
=800V ,V
GS
=0V
V
DS
=640V ,T
C
=125
ºC
V
GS
=25V,V
DS
=0V
V
GS
=-25V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=10V,I
D
=5A
V
DS
=25V,V
GS
=0V,
f=1MHz
800
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
0.85
2230
135
74
25
35
225
145
63
10
25
-
-
-
850
10
-
1
10
10
-10
-
4.0
1.1
-
-
-
-
-
-
-
-
-
-
1.4
9
36
-
-
V
μA
μA
uA
uA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
V
GS(th)
Static drain-source on-resistance
R
DS(on)
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
SD
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
DD
=400V,I
D
=10A,
R
G
=25Ω (note4,5)
V
DS
=640V,I
D
=10A ,
V
GS
=10V (note4,5)
V
GS
=0V,I
D
=10A
I
SD
=10A
dl
SD
/dt=100A/μs
(note4)
Note: 1Repetitive rating: pulse width limited by maximum junction temperature
2. L=6.3mH, I
AS
=10A,V
DD
=50V,R
G
=25Ω,staring T
J
=25ºC
3. I
SD
<9A,di/dt<200A/μs, V
DD
<BV
DSS
, staring T
J
=25
ºC
4. Pulse test: pulse width<300μs,duty cycle<2%
5. Essentially independent of operating temperature
3 of 5
Rev 1.2 Jul. 2016
KIA
SEMICONDUCTORS
10A，800V
N-CHANNEL MOSFET
10N80H
7.Typical
characteristics
4 of 5
Rev 1.2 Jul. 2016
KIA
SEMICONDUCTORS
10A，800V
N-CHANNEL MOSFET
10N80H
5 of 5
Rev 1.2 Jul. 2016
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