KIA
SEMICONDUCTORS
9A，500V
N-CHANNEL MOSFET
4750S
4.
Absolute maximum ratings
(T
C
=25
ºC
, unless otherwise specified)
Ratings
Units
TO-252
TO-220
500
±30
9.0
28
400
5.5
120
0.96
4000
300
-55~+150
120
0.96
32
V
V
A
A
mJ
V/ns
W
W/°C
V
°C
°C
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain currenet
Pulsed drain current at V
GS
=10V
Single pulse Avalanche energy
Peak diode recovery dv/dt
Power dissipation
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
V
ESD(G-S)
T
L
T
J
&T
STG
Derating factor above 25°C
Gate source ESD(HBM-C=100Pf,R=1.5KΩ
Soldering temperature distance of
1.6mm from case for 10seconds
Operating and Storage temperature range
Caution: Stresses greater than those listed in the
“
Absolute maximum ratings” may cause permanent
damage to the device.
5.
Thermal characteristics
Rating
TO-252
1.04
75
62
TO-220
Parameter
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
Symbol
θ
JC
Unit
ºC/W
ºC/W
θ
JA
2 of 6
Rev 1.0 Mar. 2016
KIA
SEMICONDUCTORS
9A，500V
N-CHANNEL MOSFET
4750S
6.
Electrical characteristics
Parameter
Off Characteristics
Drain-source breakdown voltage
Gate source breakdown voltage
Drain-to-source leakage current
Gate-to-source leakage current
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Symbol
BV
DSS
V
GSO
I
DSS
I
GSS
V
GS(th)
R
DS(on)
(T
J
=25°C,unless otherwise notes)
Conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
I
GS
=±1mA(Open drain)
V
DS
=500V ,V
GS
=0V
V
DS
=400V ,V
GS
=0V,T
J
=125
ºC
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=4A
500
±30
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
8.5
960
110
10
1.3
24
4.0
10
11
17
46
22
-
-
-
-
175
750
-
-
1
100
10
-10
4.0
0.9
-
-
-
-
-
-
-
-
-
-
-
-
1.5
8
9
32
-
-
V
V
μA
μA
uA
uA
V
Ω
S
pF
pF
pF
Ω
nC
nC
nC
Forward transconductance
gfs
V
DS
=15V,I
D
=3A
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse transfer capacitance
C
rss
Gate resistance
R
g
V
DS
=0V, F=1MHz
Total gate charge
Q
g
V
DD
=30V, ,V
GS
=0V-10V,
Gate-source charge
Q
gs
I
D
=8A(TO-252)I
D
=9A(TO-220)
Gate-drain (Miller)charge
Q
gd
Resisitive switching characteristics
Turn-on delay time
td
(ON)
Rise time
t
rise
V
DD
=250V,V
GS
=10V,R
g
=12Ω,
I
D
=8A(TO-252)I
D
=9A(TO-220)
Turn-off delay time
td
(OFF)
Fall time
t
fall
Source-drain body diode characteristics T
J
=25°C,unless otherwise notes
V
GS
=0V,I
S
=8A(TO-252)
Diode forward voltage
V
SD
I
S
=9A(TO-220)
2
Continuous source current(TO-252)
I
SD
2
Continuous source current(TO-220)
I
SD
Intergra PN-diode in MOSFET
2
Pulsed source current
I
SM
Reverse recovery time
t
rr
di
F
/dt=100A/μs, V
GS
=0V
I
F
=8A(TO-252) I
F
=9A(TO-220)
Reverse recovery charge
Q
rr
Note: 1. T
J
=25°C to 150°C
2. Pulse width <380μs; duty cycle <2%.
nS
V
A
A
A
ns
nC
3.KIA finished product specifications please customer before placing order, should obtain the latest
version of the finished product specifications.
3 of 6
Rev 1.0 Mar. 2016
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