KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
1.Description
The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2.
Features
n
n
n
n
n
n
R
DS(ON)
=2.3Ω@ V
GS
=10V
Low gate charge (typical 13.5nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.2 Dec 2014
KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
4.
Absolute maximum ratings
(T
C
= 25ºC , unless otherwise specified)
Rating
Units
TO220
TO220F TO251 TO252
TO262
600
V
±30
V
4.0
4.0*
2.8
A
2.4
2.4*
1.8
A
16
16*
12
A
9.3
5.5
mJ
180
mJ
4.5
V/ns
93
31
55
W
0.74
0.24
0.44
W/ºC
+150
ºC
-55~+150
ºC
Parameter
Symbol
Drain-source voltage
V
DSS
Gate-source voltage
V
GSS
Drain
current T
C
=25ºC
I
D
continuous
T
C
=100ºC
Drain current pulsed (note1)
I
DM
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Peak diode recovery dv/dt (note3)
dv/dt
T
C
=25ºC
Total power dissipation
P
D
Derate above 25ºC
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Rating
Parameter
Thermal resistance,junction-ambient
Thermal resistance,case-to-sink typ
Thermal resistance junction-case
Symbol
R
thJA
R
thJS
R
thJC
TO220
TO220F
TO262
62.5
0.5
1.35
--
4.05
TO251
TO252
Unit
110
50
2.25
ºC/W
2 of 6
Rev 1.2 Dec 2014
KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
(T
J
=25°C,unless otherwise notes)
Min
Typ
Max
Unit
600
-
-
-
-
-
2.0
-
-
-
-
-
-
0.6
-
2.3
-
1
10
100
-100
-
4.0
2.7
V
μA
μA
nA
nA
V/ºC
V
Ω
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Forward
Gate-body leakage
current
Reverse
Breakdown voltage temperature
coefficient
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
V
SD
I
SD
I
SM
t
RR
Q
RR
V
GS
=0V,I
SD
=4.0A(TO220,T
O262,TO220F)
I
SD
=2.8A(TO251,TO252)
TO220,TO262,TO220F
TO251,TO252
TO220,TO262,TO220F
TO251,TO252
I
SD
=4.0A(TO220,TO262,T
O220F)
I
SD
=2.8A(TO251,TO252)
dI
SD/
dt=100A/μs (note 4)
-
-
-
-
-
-
-
-
-
-
-
-
250
1.8
1.4
4.0
2.8
16.0
12
-
-
V
A
A
ns
μC
Symbol
BV
DSS
I
DSS
I
GSS
△Bv
DSS
/△T
J
V
GS(TH)
R
DS(ON)
Conditions
V
GS
=0V,I
D
=250μA
V
DS
=600V ,V
GS
=0V
V
DS
=480V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,
I
D
=2.0A(TO220,TO262、
TO220F)
I
D
=1.4A(TO251,TO252)
V
DS
=25V,V
GS
=0V,
f=1MHz
V
DD
=300V,
I
D
=4.0A(TO220,TO262,TO
220F)
I
D
=2.8A(TO251,TO252)
R
G
=25Ω (note4,5)
V
DS
=480V,
I
D
=4.0A(TO220,TO262,TO
220F)
I
D
=2.8A(TO251,TO252)
V
GS
=10V (note4,5)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
-
-
-
-
-
-
-
-
-
-
500
45
4.5
10
32
32
40
13.5
2.2
5.4
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Notes: 1. Repetitive rating : pulse width limited by maximum junction temperature
2. L=20mH, I
AS
=4.0A, V
DD
=50V, R
G
=25Ω, starting T
J
=25ºC
3. I
SD
<4.0A,di/dt<200A/μs , V
DD
<BV
DSS
, starting T
J
=25 ºC
4. Pulse test : pulse width<300μs,duty cycle<2%
5. Essentially independent of operating temperature
3 of 6
Rev 1.2 Dec 2014
KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
7.Test
circuits and waveforms
4 of 6
Rev 1.2 Dec 2014
KIA
SEMICONDUCTORS
4.0A 600V
N-CHANNEL MOSFET
4N60H
5 of 6
Rev 1.2 Dec 2014
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