KIA
SEMICONDUCTORS
6A，400V
N-CHANNEL MOSFET
730H
1.Description
The KIA730H N-Channel enhancement mode silicon gate power MOSFET is designed for
high
voltage,high
speed
power
switching applications
such
as
switching
regulators,switching
converters,solenoid,motor drivers,relay drivers.
2.
Features
n
n
n
n
n
R
DS(on)
=0.83Ω
（Typ）@V
GS
= 10 V
Low gate charge(typical 20nC)
Avalanche energy specified
Fast switching capability
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
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Rev 1.3 Nov. 2017
KIA
SEMICONDUCTORS
6A，400V
N-CHANNEL MOSFET
730H
4.
Absolute maximum ratings
(T
C
=25 ºC , unless otherwise specified)
Ratings
Units
T0251
T0220 T0220F
400
±30
6.0
3.6
24
7.3
270
4.5
73
0.58
+150
-55~+150
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
Drain current pulsed（note1）
Avalanche energy
T
c
=25°C
T
c
=100°C
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AR
E
AS
dv/dt
6.0*
3.6*
24*
6.0*
3.6*
24*
Repetitive (note1)
Single pulse (note2)
Peak diode recovery dv/dt (note 3)
T
c
=25°C
Total power dissipation
P
D
Derate above 25°C
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature
42
0.35
38
0.30
5.
Thermal characteristics
Rating
TO251
2.11
62.5
0.5
TO220
1.71
62.5
0.5
TO220F
3.31
62.5
--
Parameter
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
Thermal resistance, Case-to-sink typ.
Symbol
R
thJC
R
thJA
Unit
ºC/W
ºC/W
ºC/W
R
thCS
2 of 6
Rev 1.3 Nov. 2017
KIA
SEMICONDUCTORS
6A，400V
N-CHANNEL MOSFET
730H
6.
Electrical characteristics
Parameter
Off Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
BV
DSS
I
DSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=400V ,V
GS
=0V
V
DS
=320V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA,
400
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.54
-
0.83
520
80
15
10
60
20
40
18
2.5
8.5
-
-
-
250
2.0
-
1
10
100
-100
-
4.0
1.0
-
-
-
-
-
-
-
-
-
-
1.4
6.0
24.0
-
-
V
μA
μA
nA
nA
V/ºC
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
Gate-body leakage
I
GSS
current
Reverse
Breakdown voltage temperature
ΔBV
DSS
/ΔT
J
On characteristics
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250μA
Static drain-source on-resistance
R
DS(on)
V
GS
=10V,I
D
=3.0A
Dynamic characteristics
Input capacitance
C
iss
V
DS
=25V,V
GS
=0V,
Output capacitance
C
oss
f=1MHz
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
V
DD
=200V,I
D
=6.0A,
R
G
=25Ω (note4,5)
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
V
DS
=320V,I
D
=6.0A,
Gate-source charge
Q
gs
V
GS
=10V (note4,5)
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
V
GS
=0V,I
SD
=6.0A
Continuous Drain-source current
I
SD
Pulsed Drain-source current
I
SM
Reverse recovery time
t
rr
I
SD
=6.0A,
dI
SD
/dt=100A/μs (note 4)
Reverse recovery charge
Q
rr
Note: 1.Repetitive Rating:Pulse width limited by maximum junction temperature
2.L=14mH,I
AS
=6.0A,V
DD
=50V,R
G
=25Ω,Starting TJ=25 ºC
3.I
SD
<6.0A,di/dt<200A/μs, V
DD
< BV
DSS,
Starting TJ=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
3 of 6
Rev 1.3 Nov. 2017
KIA
SEMICONDUCTORS
6A，400V
N-CHANNEL MOSFET
730H
7.Test
circuits and waveforms
4 of 6
Rev 1.3 Nov. 2017
KIA
SEMICONDUCTORS
6A，400V
N-CHANNEL MOSFET
730H
5 of 6
Rev 1.3 Nov. 2017
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