KIA
SEMICONDUCTORS
25A，500V
N-CHANNEL MOSFET
KNX7650A
1.
Features
n
n
n
n
Advanced Planar Process
R
DS(ON),(typ.)
=170mΩ@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Rugged Poly silicon Gate Structure
2.
Features
n
n
n
BLDC Motor Driver
Electric Welder
High Efficiency SMPS
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 8
Rev 1.0.Oct. 2018
KIA
SEMICONDUCTORS
25A，500V
N-CHANNEL MOSFET
KNX7650A
4.
Ordering Information
Part Number
KNF7650A
KNH7650A
Package
TO-220F
TO-3P
Brand
KIA
KIA
5.
Absolute maximum ratings
TC=25
ºC
unless otherwise specified
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ Tc=100
ºC
Pulsed Drain Current at V
GS
=10V
[2,4]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
ºC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Ratings
To-220F TO-3P
500
±30
25
16
100
1800
5.0
105
0.84
300
260
-55 to 150
290
2.33
Unit
V
A
mJ
W
W/
ºC
ºC
Caution: Stresses greater than those listed in the
“Absolute
Maximum Ratings” may cause permanent
damage to the device.
6.
Thermal characteristics
Ratings
To-220F
TO-3P
100
-
1.19
0.43
Parameter
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Units
ºC/W
2 of 8
Rev 1.0.Oct. 2018
KIA
SEMICONDUCTORS
25A，500V
N-CHANNEL MOSFET
KNX7650A
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250μA
V
DS
=500V ,V
GS
=0V
V
DS
=400V , V
GS
=0V
T
C
=125ºC,
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
170
-
30
4280
1400
185
24
40
100
35
76
20
19
-
-
-
530
4.5
-
1
125
+100
-100
210
4.0
-
-
-
-
-
-
-
-
-
-
-
1.5
25
100
-
-
V
μA
μA
nA
nA
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
7.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
I
GSS
On characteristics
Static drain-source on-resistance
R
DS(on)
V
GS
=10V,I
D
=14A
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250μA
Forward Transconductance
gfs
V
DS
=30V,I
D
=14A
Dynamic characteristics
Input capacitance
C
iss
V
DS
=25V,V
GS
=0V,
Output capacitance
C
oss
f=1MHz
Reverse transfer capacitance
C
rss
Total gate charge
Turn-on delay time
t
d(on)
Rise time
t
r
V
DD
=250V,I
D
=14A,
V
GS
=10V,R
G
=10Ω
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
V
DS
=250V,I
D
=28A ,
Gate-source charge
Q
gs
V
GS
=0 to10V
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
V
GS
=0V,I
s
=18A
Continuous drain-source current
[2]
I
SD
Integral pn-diode
[2]
In MOSFET
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
V
GS
=0V,I
F
=28A
Dl
F
/dt=100A/μs
Reverse recovery charge
Q
rr
Note:
1.TJ=+25°C to +150°C
2.Silicon limited current only.
3.Package limited current
4.Repetitive rating; pulse width by maximum junction temperature
5.Pulse width≤380μs; duty cycle≤2%
3 of 8
Rev 1.0.Oct. 2018
KIA
SEMICONDUCTORS
25A，500V
N-CHANNEL MOSFET
KNX7650A
8.
Typical Characteristics
4 of 8
Rev 1.0.Oct. 2018
KIA
SEMICONDUCTORS
25A，500V
N-CHANNEL MOSFET
KNX7650A
5 of 8
Rev 1.0.Oct. 2018
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