KIA
SEMICONDUCTORS
15A，500V
N-CHANNEL MOSFET
KNX6650A
`
1.
Description
The KNX6650A-Channel enhancement mode silicon gate power MOSFET is designed for high voltage,
high speed power switching applications such as high efficiency switched mode power supplies, active
power factor correction, electronic lamp ballasts based on half bridge topology
2.
Features
n
n
n
n
Proprietary New Planar Technology
R
DS(ON),typ.
=0.33
Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 7
Rev 1.0 Feb. 2018
KIA
SEMICONDUCTORS
15A，500V
N-CHANNEL MOSFET
KNX6650A
`
4.
Ordering Information
Part Number
KNF6650A
KNP6650A
Package
TO-220F
TO-220
Brand
KIA
KIA
5.
Absolute maximum ratings
TC=25
ºC
unless otherwise specified
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
Continuous Drain Current @ T
C
=100
ºC
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
ºC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and StorageTemperatureRange
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Ratings
TO220 TO22F
500
±30
15
Figure3
Figure6
1000
5.0
140
60
1.12
0.48
300
260
-55 to 150
Unit
V
A
mJ
V/ns
W
W/
ºC
ºC
Caution: Stresses greater than those listed in the
“Absolute
Maximum Ratings” may cause permanent
damage to the device.
6.
Thermal characteristics
Ratings
TO220
TO220F
62
100
0.9
2.1
Parameter
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Units
ºC/W
2 of 7
Rev 1.0 Feb. 2018
KIA
SEMICONDUCTORS
15A，500V
N-CHANNEL MOSFET
KNX6650A
`
7.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Symbol
BV
DSS
I
DSS
Gate-body leakage current
I
GSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250μA
V
DS
=500V ,V
GS
=0V
V
DS
=400V , V
GS
=0V
T
C
=125ºC,
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.33
-
15
2148
208
22
13
28
44
35
46
12
17
-
-
-
520
4.5
-
1
100
+100
-100
0.45
4.0
-
-
-
-
-
-
-
-
-
-
-
1.5
15
60
-
-
V
μA
μA
nA
nA
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
On characteristics
Static drain-source on-resistance
R
DS(on)
V
GS
=10V,I
D
=7.5A
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250μA
Forward Transconductance
gfs
V
DS
=30V,I
D
=15A
Dynamic characteristics
Input capacitance
C
iss
V
DS
=25V,V
GS
=0V,
Output capacitance
C
oss
f=1MHz
Reverse transfer capacitance
C
rss
Total gate charge
Turn-on delay time
t
d(on)
Rise time
t
r
V
DD
=250V,I
D
=15A,
V
GS
=10V,R
G
=6.1Ω
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
V
DD
=250V,I
D
=15A ,
Gate-source charge
Q
gs
V
GS
=0 to10V
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
V
GS
=0V,I
s
=15.0A
[4]
Continuous drain-source current
I
SD
Integral pn-diode
In MOSFET
Pulsed drain-source current
[4]
I
SM
Reverse recovery time
t
rr
V
GS
=0V,I
F
=15.0A
d
lF
/dt=100A/μs
Reverse recovery charge
Q
rr
Note:
[1] T
J
=+25
ºC
to +150
ºC
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 15A di/dt < 100 A/μs, V
DD
< BV
DSS
, T
J
=+150
ºC.
[4] Pulse width≤380µs; duty cycle≤2%.
3 of 7
Rev 1.0 Feb. 2018
KIA
SEMICONDUCTORS
15A，500V
N-CHANNEL MOSFET
KNX6650A
`
8.
Typical Characteristics
4 of 7
Rev 1.0 Feb. 2018
KIA
SEMICONDUCTORS
15A，500V
N-CHANNEL MOSFET
KNX6650A
`
5 of 7
Rev 1.0 Feb. 2018
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