KIA
SEMICONDUCTORS
12A，600V
N-CHANNEL MOSFET
12N60H
1.Description
The KIA12N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts based on half bridge topology.
2.
Features
n
n
n
n
n
R
DS(on)
= 0.53Ω @ V
GS
= 10 V
Low gate charge ( typical 52nC)
Fast switching capability
avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 7
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
12A，600V
N-CHANNEL MOSFET
12N60H
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Drain-source voltage
Drain current continuous
Drain current pulsed
T
C
=25 ºC
T
C
=100 ºC
Symbol
V
DSS
V
GSS
I
D
(note 1)
I
DP
Repetitive (note 1)
E
AR
Avalanche energy
Single pulse (note 2)
E
AS
Peak diode recovery dv/dt (note 3)
dv/dt
T
C
=25 ºC
Total power dissipation
P
D
derate above 25 ºC
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature.
(TC= 25 ºC , unless otherwise specified)
Rating
Units
TO-220
TO-220F
V
600
V
±30
12.0
*
12.0
A
*
7.4
7.4
A
*
A
48.0
48
mJ
23.1
mJ
865
V/ns
4.5
W
54
231
0.43
1.85
W/ºC
+150
ºC
-55~+150
ºC
5.
Thermal characteristics
Rating
TO-220
TO-220F
62.5
0.5
0.54
-
2.33
Parameter
Thermal resistance,Junction--ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
R
thJA
R
thCS
R
thJC
Unit
ºC/W
ºC/W
ºC/W
2 of 7
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
12A，600V
N-CHANNEL MOSFET
12N60H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Unit
V
GS
=0V,I
D
=250μA
V
DS
=600V ,V
GS
=0V
V
DS
=480V ,T
C
=125ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=6.0A
V
DS
=25V,V
GS
=0V,
f=1MHz
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
0.53
1850
180
20
30
90
140
90
52
8.5
20
-
-
-
430
5.0
-
1
10
100
-100
-
4.0
0.65
-
-
-
-
-
-
-
-
-
-
1.4
12.0
48.0
-
-
V
μA
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
V
GS(th)
Static drain-source on-resistance
R
DS(on)
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
SD
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
DD
=300V,I
D
=12.0A,
R
G
=25Ω(note4,5)
V
DS
=480V,I
D
=12.0A
V
GS
=10V,(note4,5)
V
GS
=0V,I
SD
=12.0A
I
SD
=12.0A
dl
SD
/dt=100A/μs
(note4)
Note: 1.repetitive rating : pulse width limited by maximum junction temperature
2.L=11mH,I
AS
=12.0A,V
DD
=50V,R
G
=25Ω,staring T
J
=25ºC
3.I
SD
<12.0A,di/dt<200A/μs,V
DD
<BV
DSS
,staring T
J
=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
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Rev 1.1 JAN 2014
嵌入式系统
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