KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
3308A
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulse drain current
Avalanche current
Avalanche energy
Symbol
V
DSS
V
GSS
T
C
=25 ºC
T
C
=100 ºC
T
C
=25 ºC
I
D3
I
DP4
I
AS5
E
AS5
Maximum
TO-252 TO-263
TO-247
80
+25
80*
70*
80
70
340
20
410
Units
V
V
80
70
A
A
A
A
mJ
T
C
=25 ºC
Maximum power dissipation
T
C
=100 ºC
Junction & storage temperature range
T
J
,T
STG
*Drain current limited by maximum junction temperature.
P
D
120
60
240
100
-55½175
288
144
W
W
ºC
5.
Thermal characteristics
Parameter
Thermal resistance-junction to case
Thermal resistance-junction to ambient
Symbol
R
θjc
R
θja
TO-252
1.04
Typical
TO-263
0.52
55
TO-247
0.44
Units
ºC/W
2 of 7
Rev 1.2 Nov. 2017
KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
3308A
6.
Electrical characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Diode characteristics
Diode forward voltage
Diode continuous forward current
Reverse recovery time
Reverse recovery charge
Dynamic characteristics
2
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gate charge characteristics
2
Total gate charge
Gate-source charge
Q
g
Q
gs
V
DS
=37.5V, V
GS
=10V,
I
D
=40A,
-
-
76
9.5
-
-
nC
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
=37.5V,I
D
=40A,
V
GS
=10V,R
G
=6.8Ω
V
GS
=0V, V
DS
=25V,
F=1.0MHz
V
GS
=0V, V
DS
=0V,F=1MHz
-
-
-
-
-
-
-
1.3
3110
445
270
20.4
63
67
43
-
-
-
-
-
-
-
-
nS
pF
Ω
V
SD1
I
S3
t
rr
Q
rr
I
F
=40A,dl/dt=100A/μs
I
SD
=40A,V
GS
=0V
-
-
-
-
-
-
25
18.5
1.3
80
-
-
V
A
nS
nC
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)1
V
GS
=0V,I
DS
=250μA
V
DS
=64V,V
GS
=0V
T
J
=125 ºC
V
DS
=V
GS
, I
DS
=250μA
V
GS
=+25V,V
DS
=0V
V
GS
=10V,I
DS
=30A
80
-
-
2
-
-
-
-
-
3
-
6.2
-
1
100
4
+100
9
V
μA
V
nA
mΩ
Symbol
(T
A
=25°C,unless otherwise noted)
Conditions
Min
Typ
Max Unit
Gate-drain charge
Q
gd
-
40
-
Note:1. Pulse test; pulse width
≤300μs,
duty cycle
≤2%.
2.Guaranteed by design,not subject to production testing.
3.Package limitation current is 50A. Calculated continuous current based on maximum allowable
junction temperature.
4.Repetitive rating, pulse width limited by max junction temperature.
5.Starting T
J
=25 ºC, L=1mH,I
AS
=40A.
3 of 7
Rev 1.2 Nov. 2017
测试/测量
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