KIA
SEMICONDUCTORS
7A，600V
N-CHANNEL MOSFET
KNX4660A
1.
Description
The KNX4660A-Channel enhancement mode silicon gate power MOSFET is designed for high voltage,
high speed power switching applications such as high efficiency switched mode power supplies, active
power factor correction, electronic lamp ballasts based on half bridge topology.
2.
Features
n
n
n
n
ROHS Compliant
R
DS(ON)
,
typ
=1.0Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
3.
Application
n
n
n
Adaptor
Charger
SMPS Standby Power
4.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 8
Rev 1.0 Apr. 2018
KIA
SEMICONDUCTORS
7A，600V
N-CHANNEL MOSFET
KNX4660A
5.
Ordering Information
Part Number
KNF4660A
Package
TO-220F
Brand
KIA
6.
Absolute maximum ratings
TC=25℃ unless otherwise specified
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Power Dissipation
Derating Factor above 25
ºC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
L
T
PAK
T
J
& T
STG
Ratings
600
±30
7.0
28
550
42
0.34
300
260
-55 to 150
Unit
V
A
mJ
W
W/
ºC
ºC
Caution: Stresses greater than those listed in the
“Absolute
Maximum Ratings” may cause permanent
damage to the device.
7.
Thermal characteristics
Parameter
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Ratings
100
2.98
Units
ºC/W
2 of 8
Rev 1.0 Apr. 2018
KIA
SEMICONDUCTORS
7A，600V
N-CHANNEL MOSFET
KNX4660A
8.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Symbol
BV
DSS
I
DSS
Gate-body leakage current
I
GSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250μA
V
DS
=600 ,V
GS
=0V
V
DS
=480, V
GS
=0V
T
J
=125ºC,
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
V
GS
=10V,I
D
=3.5A
V
DS
=V
GS
, I
D
=250μA
V
DS
=30V,I
D
=3.5A
V
DS
=25V,V
GS
=0V,
f=1MHz
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
-
11
1120
90
10
10
11
17
10
19
5
5
-
-
-
349
1.0
-
1
100
+100
-100
1.25
4.0
-
-
-
-
-
-
-
-
-
-
-
1.5
7.0
28
-
-
V
μA
μA
nA
nA
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
On characteristics
Static drain-source on-resistance
R
DS(on)
Gate threshold voltage
V
GS(th)
Forward Transconductance
gfs
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Total gate charge
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
[2]
Continuous drain-source current
I
SD
[2]
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
Note:
[1] TJ=+25
ºC
to +150
ºC
[2] Pulse width≤380μs; duty cycle≤2%.
V
DD
=300,I
D
=7A,
V
GS
=10V,R
G
=4.7Ω
V
DD
=300V,I
D
=7A ,
V
GS
=0 to10V
V
GS
=0V,I
s
=7A
Integral pn-diode
In MOSFET
V
GS
=0V,I
F
=7A
dl
SD
/dt=100A/μs
3 of 8
Rev 1.0 Apr. 2018
KIA
SEMICONDUCTORS
7A，600V
N-CHANNEL MOSFET
KNX4660A
9.
Typical Characteristics
4 of 8
Rev 1.0 Apr. 2018
KIA
SEMICONDUCTORS
7A，600V
N-CHANNEL MOSFET
KNX4660A
5 of 8
Rev 1.0 Apr. 2018
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