KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
1.Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2.
Features
n
n
n
n
n
n
R
DS(ON)
=4.1Ω@V
GS
=10V.
Low gate charge (typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
4.
Absolute maximum ratings
(T
C
= 25ºC, unless otherwise noted)
Rating
Units
252/251
220
220F
600
V
±30
V
2.0*
2.0
2.0*
A
1.35*
1.35
1.35*
A
8*
8
8*
A
4.4
mJ
120
mJ
4.5
V/ns
44
55.5
23.6
W
0.35
0.44
0.19
W/ ºC
+150
ºC
-50~+150
ºC
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
Drain current pulsed (note1)
Avalanche Enlsed
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AR
E
AS
dv/dt
Repetitive (note1)
Single pulse (note2)
Peak diode recovery dv/dt (note3)
T
C
=25ºC
P
D
Total power dissipation
Derate above 25ºC
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-amient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
Symbol
R
thJA
R
thCS
R
thJC
Rating
252/251
220
62.5
62.5
--
2.87
0.5
2.25
220F
62.5
--
5.3
Unit
ºC/W
ºC/W
ºC/W
2 of 6
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage Forward
current
Reverse
Breakdown voltage temperature
coefficient
On characteristics
Gate threshold voltage
Static drain-source on- resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
I
DSS
I
GSS
△BV
DSS
/△T
J
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
SD
I
SD*
I
SM*
t
RR
Q
RR
(T
C
= 25 ºC, unless otherwise noted)
Test conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
C
=125ºC
V
GS
=30V, V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
= V
GS
I
D
=250μA
V
GS
=10V,I
D
=1.0A
V
DS
=25V,V
GS
=0V,
f=1MHz
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
4.1
200
20
4
10
25
25
30
9
1.5
4.0
-
-
230
1.0
-
1
10
100
-100
-
4.0
5.0
-
-
-
-
-
-
-
-
-
-
1.4
2.0
8.0
-
-
V
μA
μA
nA
nA
V/ ºC
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
DD
=300V,I
D
=2.0A,
R
G
=25Ω (note4,5)
V
DS
=480V,I
D
=2.0A
V
GS
=10V (note4,5)
V
GS
=0V,I
SD
=2.0A
I
SD
=2.0A
dI
SD
/dt=100A/μs (note4)
Notes:1.repetitive rating:pulse width limited by maximum junction temperature
2.L=60mH,I
AS
=2.0A,V
DD
=50V,R
G
=25Ω,starting T
J
=25ºC
3.I
SD
<2.0A,di/dt<200A/μs,V
DD
<BV
DSS
,starting T
J
=25ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
3 of 6
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
7.Typical
characteristics
4 of 6
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
2.0A, 600V
N-CHANNEL MOSFET
2N60H
5 of 6
Rev 1.1 JAN 2014
传感器
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