KIA
SEMICONDUCTORS
15A，100V
N-CHANNEL MOSFET
KNX6610A
1.
Features
The KNX6610A is the highest performance trench N-ch MOSFETS with extreme high cell density,
which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The KNX6610A meet the RoHS and green product requirement, 100% EAS guaranteed with full function
reliability approved.
2.
Features
n
n
n
n
n
R
DS(ON)
=70mΩ(typ.)@V
GS
=10V
Advanced high cell density trench technology
Super low gate charge
Excellent Cdv/dt effect desline
Green device available
3.
Applications
n
n
n
High frequency point-of-load synchronous buck converter
Networking DC-DC power system
Load switch
4.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 5
Rev 1.0 Oct. 2018
KIA
SEMICONDUCTORS
15A，100V
N-CHANNEL MOSFET
KNX6610A
4.
Ordering Information
Part Number
KND6610A
KNU6610A
Package
TO-252
TO-251
Brand
KIA
KIA
5.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current , V
GS
@10V
1
Pulsed drain current
2
Power dissipation
3
Single pulse avalanche engergy
3
Avalanche current
Operating junction and storage temperature range
T
C
=25°C
T
A
=25°C
T
C
=25°C
T
C
=100°C
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
STG
Rating
100
+20
15
8.5
24
34.7
2
7.3
11
-55 to150
Units
V
V
A
W
mJ
A
ºC
6.
Thermal characteristics
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
R
θJC
R
θJA
Typ
-
-
Max
3.6
62
Unit
ºC/W
2 of 5
Rev 1.0 Oct. 2018
KIA
SEMICONDUCTORS
15A，100V
N-CHANNEL MOSFET
KNX6610A
(T
J
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
D
=250μA
100
-
-
V
Reference 25℃
I
D
=1mA
V
GS
=10V,I
D
=8A
V
GS
=4.5V,I
D
=6A
V
DS
= V
GS
,I
D
=250uA
V
DS
=80V, V
GS
=0V
T
J
=25°C
V
DS
=80V, V
GS
=0V
T
J
=55°C
V
GS
=+20V, V
DS
=0V
V
DS
=5V, I
D
=10A
V
DS
=0V, V
GS
=0V
f=1MHz
V
DS
=80V, I
D
=10A
V
GS
=10V
-
-
-
1.0
-
-
-
-
-
1.2
-
-
-
-
V
DD
=50V, I
D
=10A,
R
G
=3.3Ω,V
GS
=10V
-
-
-
-
-
-
1.5
-
-
-
-
-
0.098
70
80
1.5
-4.57
-
-
-
13
1.8
26.2
4.6
5.1
4.2
8.2
35.6
9.6
1535
60
37
-
-
-
-
37
27.3
-
15
24
1.2
-
-
ns
nC
-
80
100
2.5
-
1
μA
5
+100
-
3.5
nA
S
Ω
V/ºC
mΩ
V
mV/ºC
7.
Electrical characteristics
Parameter
Drain-source breakdown voltage
BV
DSS
temperature coefficient
Drain-source on-resistance
2
Gate threshold voltage
V
GS(TH)
temperature coefficient
Drain-source leakage current
Gate-source forward leakage
Forward transconductance
Gate resistance
Total gate charge(10V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Single pulse avalanche energy
5
Continuous source current
1,6
Maximum pulsed current
2,6
Diode forward voltage
2
Reverse recovery time
Reverse recovery charge
Note:
Symbol
BV
DSS
△BV
DSS
/△T
J
R
DS(on)
V
GS(TH)
△V
GS(TH)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
EAS
I
S
I
SM
V
SD
t
rr
Q
rr
V
DS
=15V,V
GS
=0V
f=1MHz
V
DD
=25V,I
AS
=5A
L=0.1mH
V
D
=V
G
=0V,
Force current
I
S
=1A, V
GS
=0V
T
J
=25°C
I
F
=10A,dI/dt=100A/μs
T
J
=25°C
pF
mJ
A
V
ns
nC
1.
The data tested by surface mounted on a 1 inch
2
board with 2OZ copper.
2.
The data tested by pulsed, pulse width< 300μs, duty cycle < 2%.
3.
The EAS data shows max. rating. The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH, I
AS
=11A
4.
The power dissipation is limited by 150
ºC
junction temperature.
5.
The min. value is 100% EAS tested guarantee.
6.
The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total
power dissipation.
3 of 5
Rev 1.0 Oct. 2018
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