KIA
SEMICONDUCTORS
FAST RECOVERY DIODE
8.0A，700V
08TB70D
1.Description
This series are state−of−the−art devices designed for use in switching power supplies,
inverters and as free wheeling diodes.
2.
Features
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Ultrafast 25 nanosecond recovery time
175°C operating junction temperature
Epoxy meets UL 94 V−0 @ 0.125 in
Low forward voltage
Low leakage current
High temperature glass passivated junction
Reverse voltage to 700 V
Pb−free packages are available
3.
Mechanical Characteristics
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Case: epoxy, molded
Weight: 1.9 grams (approximately)
Finish: all external surfaces corrosion resistant and terminal
Leads are readily solderable
Lead temperature for soldering purposes: 260°C max for 10 seconds
4.
Pin configuration
Pin (TO-220)
1
3
Function
Cathode
Anode
Pin (TO-252、
TO-263)
1
2
3
Function
Cathode
Cathode
Anode
1 of 2
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
FAST RECOVERY DIODE
8.0A，700V
08TB70D
5.
Maximum ratings
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
Total device, (Rated VR), T
C
= 150°C
Peak repetitive forward current
(Rated VR, square wave, 20 kHz), T
C
= 150°C
Nonrepetitive peak surge current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Operating junction temperature and storage
temperature range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FM
Rating
700
8.0
16
Units
V
A
A
I
FSM
100
A
ºC
T
J
,T
stg
-65 to +175
6.
Thermal characteristics
Parameter
Maximum thermal resistance, junction−to−case
Symbol
R
θJC
Rating
2.0
Unit
ºC/W
7.
Electrical characteristics
Rating
Parameter
Maximum Instantaneous Forward Voltage
(Note 1)
Maximum Instantaneous Reverse Current
(Note 1)
Symbol
V
F
Conditions
I
F
=8.0A, T
C
=25°C
T
J
=150°C
I
R
V
R
=600V
T
J
=25°C
t
rr
I
F
=0.5A, I
R
=1.0A,
I
REC
=0.25A
-
-
-
-
25
30
ns
Min
-
-
Typ
1.8
-
Max
2.6
500
Unit
V
μA
Maximum Reverse Recovery Time
Note:1. Pulse test: pulse width=5ms, Duty cycle≤2.0%.
、
2 of 2
Rev 1.1 JAN 2014
微控制器 MCU
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