KIA
SEMICONDUCTORS
3.5A， 30V
N-CHANNEL MOSFET
2306
1.
Features
n
n
n
n
V
DS
=30V,R
DS(on)
=0.057Ω@V
GS
=10V,I
D
=3.5A
V
DS
=30V,R
DS(on)
=0.094Ω@V
GS
=4.5V,I
D
=2.8A
Power MOSFET
100% R
g
tested
2.Symbol
Pin
1
2
3
Function
Gate
Source
Drain
3.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous (T
J
=150
ºC)
a, b
Pulsed drain current
a
Continuous source current (diode conduction)
a, b
Power dissipation
a, b
Junction and storage temperature range
Parameter
Maximum junction-ambient
a
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
P
D
T
J ,
T
STG
Symbol
t< 5 sec
steady state
R
thJA
T
A
=25°C
T
A
=70°C
Rating
30
+20
3.5
2.8
16
1.25
1.25
0.8
-55 to150
Typ
-
130
Units
V
V
A
W
ºC
Units
ºC/W
Max
100
-
Notes
a.
Surface mounted on FR4 board,
b.
t<5 sec.
1 of 4
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
3.5A， 30V
N-CHANNEL MOSFET
2306
4.
Electrical characteristics
Parameter
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate- body leakage
Zero gate voltage drain current
On-state drain current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
=0V,I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=+20V, V
DS
=0V
V
DS
=25V, V
GS
=0V
V
DS
>4.5V, V
GS
=10V
V
DS
>4.5V, V
GS
=4.5V
V
GS
=10V,I
D
=3.5A
V
GS
=4.5V,I
D
=2.8A
V
DS
=4.5V, I
D
=-3.5A
V
GS
=0V,I
S
=1.25A
30
1
-
-
Symbol
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
-
-
-
-
-
1.8
+100
1
-
-
V
V
nA
μA
A
Ω
S
V
6
4
-
-
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Dynamic
b
a
a
R
DS(on)
gfs
V
SD
-
-
-
-
6.9
0.8
0.057
0.094
-
1.2
-
-
V
DS
=15V,
Total gate charge
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V, I
D
=1A,
R
L
=15Ω, R
G
=6Ω,
V
GEN
=10V
-
-
-
-
9
7.5
17
5.2
20
18
35
12
ns
Q
g
Q
gt
Q
gs
Q
gd
R
G
C
iss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
f=1MHz
V
GS
=5V,I
D
=3.5A
V
DS
=15V, V
GS
=10V
I
D
=3.5A
-
-
0.5
-
-
-
-
4.2
8.5
1.9
1.35
-
555
120
60
-
2.4
-
-
-
pF
Ω
7
20
nC
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width<300μs, duty cycle<2%.
2 of 4
Rev 1.1 JAN 2014
ARM技术
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