PRODUCT DATASHEET
A30 Series PTC Devices
A30 Series PTC Devices
Description
The JDTFUSE A30 Series radial leaded device is
designed to provide overcurrent protection for low
voltage (≤30V) applications where space is not a
concern and resettable protection is preferred.
Features
●
Cured, flame retardant epoxy polymer insulating
material meets UL 94V-0 requirements
● Fast time-to-trip
● RoHS compliant, Lead-Free and Halogen-Free*
Agency Approvals
Agency
File Number
E472196
pending
Applications
●
USB hubs, ports and peripherals
●
Computers & peripherals
●
Motor protection
●
General electronics
●
Automotive applications
Regulation
Standard
2002/95/EC
EN14582
JDT FUSE Industrial Corp.
Page 1/6
www.jdtfuse.com
A30 Series PTC Devices
Performance Specification
Model
A30-030
A30-040
A30-050
A30-065
A30-075
A30-090
A30-110
A30-135
A30-160
A30-185
A30-250
A30-300
A30-400
A30-500
A30-600
A30-700
A30-800
A30-900
V
max
(V dc)
I
max
(A)
I
hold
@25°C
(A)
@25°C
(A)
I
trip
0.60
0.80
1.00
1.30
1.50
1.80
2.20
2.70
3.20
3.70
5.00
6.00
8.00
Typ.
(W)
P
d
Maximum
Time To Trip
Current
(A)
Time
(Sec)
( )
Resistance
R
i min
0.370
0.250
0.150
0.180
0.100
0.070
0.050
0.070
0.030
0.030
0.020
0.020
0.010
0.010
0.005
0.005
0.005
0.005
R
1max
( )
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
0.30
0.40
0.50
0.65
0.75
0.90
1.10
1.35
1.60
1.85
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
0.44
0.45
0.46
0.47
0.48
0.6
0.7
0.8
0.9
1.0
1.2
2.0
2.5
3.0
3.5
3.8
4.0
4.2
8.00
8.00
8.00
8.00
8.0
4.50
5.50
6.75
8.00
9.25
12.5
15.0
20.0
25.0
30.0
35.0
40.0
40.0
0.3
0.3
0.3
0.4
0.4
5.9
6.6
7.3
8.0
8.7
10.3
10.8
12.7
14.5
16.0
17.5
18.8
20.0
1.080
0.645
0.600
0.450
0.375
0.200
0.170
0.220
0.110
0.090
0.070
0.080
0.050
0.050
0.040
0.030
0.020
0.020
10.00
12.00
14.00
16.00
18.00
I
hold
= Hold Current. Maximum current device will not trip in 25°C still air.
I
trip
= Trip Current. Minimum current at which the device will always trip in 25°C still air.
V
max
= Maximum operating voltage device can withstand without damage at rated current (Imax).
I
max
= Maximum fault current device can withstand without damage at rated voltage (V max).
P
d
= Power dissipation when device is in the tripped state in 25°C still air environment at rated voltage.
R
i min/max
= Minimum/Maximum device resistance prior to tripping at 25°C.
R
1max
= Maximum device resistance is measured one hour post reflow.
CAUTION : Operation beyond the specified ratings may result in damage and possible arcing and flame.
Environmental Specifications
Test
Passive aging
Humidity aging
Thermal shock
Vibration
Conditions
+85°C, 1000 hrs.
+85°C, 85% R.H. , 168 hours
+85°C to -40°C, 20 times
MIL-STD-202,Method 215
MIL-STD-202,Method 201
Resistance change
±5% typical
±5% typical
±33% typical
No change
No change
Resistance to solvent
Ambient operating conditions : - 40 °C to +85 °C
Maximum surface temperature of the device in the tripped state is 125 °C
JDT FUSE Industrial Corp.
Page 2/6
www.jdtfuse.com
A30 Series PTC Devices
Thermal Derating Curve
Derating Curves for A30 Series
180
160
Percentage of Rated Current
140
120
100
80
60
40
20
-40 -30 -20
-10
0
10
20
30
40
50
60
70
80
Temperature (°C )
Average Time-Current Curve
1000
0.90A
1.10A
1.35A
1.60A
1.85A
2.50A
3.00A
4.00A
5.00A
6.00A
7.00A
8.00A
9.00A
0.75A
0.65A
0.50A
0.40A
0.30A
100
TIME IN SECOND
10
1
0.1
0.01
1
10
CURRENT IN AMPERES
100
JDT FUSE Industrial Corp.
Page 3/6
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A30 Series PTC Devices
I
hold
Versus Temperature
Model
A30-030
A30-040
A30-050
A30-065
A30-075
A30-090
A30-110
A30-135
A30-160
A30-185
A30-250
A30-300
A30-400
A30-500
A30-600
A30-700
A30-800
A30-900
Maximum ambient operating temperature (T
mao
) vs. hold current (I
hold
)
- 40°C
- 20°C
0°C
25°C
40°C
50°C
60°C
70°C
85°C
0.44
0.58
0.73
0.95
0.00
1.31
1.60
1.96
2.32
2.68
3.63
4.35
5.80
7.25
8.70
10.15
11.60
13.05
0.39
0.52
0.65
0.85
0.00
1.17
1.43
1.76
2.08
2.41
3.25
3.90
5.20
6.50
7.80
9.10
10.40
11.70
0.35
0.46
0.58
0.75
0.00
1.04
1.27
1.55
1.84
2.13
2.88
3.45
4.60
5.75
6.90
8.05
9.20
10.35
0.30
0.40
0.50
0.65
0.75
0.90
1.10
1.35
1.60
1.85
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
0.25
0.33
0.42
0.54
0.00
0.75
0.91
1.12
1.33
1.54
2.08
2.49
3.32
4.15
4.98
5.81
6.64
7.47
0.23
0.31
0.38
0.50
0.00
0.69
0.85
1.04
1.23
1.42
1.93
2.31
3.08
3.85
4.62
5.39
6.16
6.93
0.20
0.27
0.34
0.44
0.00
0.61
0.75
0.92
1.09
1.26
1.70
2.04
2.72
3.40
4.08
4.76
5.44
6.12
0.18
0.24
0.31
0.40
0.00
0.55
0.67
0.82
0.98
1.13
1.53
1.83
2.44
3.05
3.66
4.27
4.88
5.49
0.16
0.21
0.26
0.34
0.00
0.47
0.57
0.70
0.83
0.96
1.30
1.56
2.08
2.60
3.12
3.64
4.16
4.68
Soldering Parameters
TP 260
Pre-Heating
1 Minute Min.
Soldering
5Sea.MAX
Gradual
Cooling
Profile Feature
Average Ramp-Up Rate
(Ts max to T p)
Preheat
Pb-Free Assembly
3℃/second mac.
Temperature (°C )
100
25
Time
-Temperature Min(Ts min)
-Temperature Max(Ts max)
-Time(Ts min to Ts max)
Time maintained above:
-Temperature(TL)
-Time(tL)
Peak Temperature(Tp)
Ramp-Down Rate
150℃
200℃
60~180 seconds
217℃
60~150 seconds
260℃
6℃/second max.
Recommended reflow methods: IR, vapor phase oven, hot
air oven, N2 environment for lead-free
Recommended maximum paste thickness is 0.25mm
Devices can be cleaned using standard industry methods
and solvents.
Note 1:All temperature refer to topside of the package,
measured on the package body surface.
Note 2: If reflow temperatures exceed the recommended
profile, devices may not meet the performance
requirements.
JDT FUSE Industrial Corp.
Time 25℃ to Peak Temperature 8 minutes max
Storage Condition
0℃~35℃,≤70%RH
Page 4/6
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Microchip MCU
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