HX3415A
P-Channel Enhancement Mode MOSFET
Description
The HX3415 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Schematic diagram
General Features
V
DS
=-20V，I
D
=-4A
R
DS(ON)
(Typ.)=42mΩ @V
GS
=-2.5V
R
DS(ON)
(Typ.)=38.3mΩ @V
GS
=-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
ESD Rating: 2500V HBM
Marking and pin assignment
SOT-23
(TOP VIEW)
Application
PWM applications
Load switch
D
3
Package
SOT-23
G
Ordering Information
Part Number
HX3415
Storage Temperature
-55°C to +150°C
Package
SOT-23
1
S
Devices Per Reel
3000
2
Absolute Maximum Ratings
(TA=25℃ unless otherwise noted)
parameter
Drain-source voltage
Gate-source voltage
Drain current-continuous
a
@Tj=125℃
-pulse
d
b
Maximum power dissipation
Operating junction Temperature range
1
symbol
V
DS
V
GS
I
D
I
DM
T
A
=25℃
T
A
=70℃
P
D
Tj
limit
-20
±8
-4
-30
1
1.4
-55—150
unit
V
V
A
A
W
℃
HX3415A
Electrical Characteristics
(TA=25℃ unless otherwise noted)
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate threshold voltage
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Diode forward voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
gfs
C
ISS
C
OSS
C
RSS
t
D(ON)
tr
t
D(OFF)
tf
Qg
Qgs
Qgd
V
SD
Condition
V
GS
=0V, I
D
=-250µA
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
GS
=-5V, I
D
=-4A
Min
-20
-
-
-0.4
-
-
8
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.59
38.3
46.4
-
751
115
80
13
9
19
29
9.3
1
2.2
-0.81
Max
-
-1
±10
-0.9
45
60
-
-
-
-
-
-
-
-
-
-
-
-1.2
V
nC
ns
pF
Unit
V
µA
µA
V
mΩ
S
OFF Characteristics
ON Characteristics
Dynamic Characteristics
V
DS
=-10V ,V
GS
=0V
f=1.0MHz
Switching Characteristics
V
DD
=-10V
I
D
=-2.8A
V
GEN
=-4.5V
R
L
=10ohm
R
GEN
=-60ohm
V
DS
=-10V,I
D
=-3A
V
GS
=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
V
GS
=0V,Is=-1.25A
Notes:
a.
surface mounted on FR4 board,t≤10sec
b.
pulse test: pulse width≤300μs,duty≤2%
c.
guaranteed by design, not subject to production testing
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
100
℃/W
2
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
