SOT-23-3 Plastic-Encapsulate Transistors
HX3400
MOSFET(N-Channel)
FEATURES
High Power and current handing capability
Lead free product is acquired
Surface Mout Package
MARKING:
XORB
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)
Symbol
V
DS
V
GS
I
D
P
D
Tj
Tstg
Drain-Source voltage
Gate-Source voltage
Drain current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
±12
5.8
1.4
-55-150
-55-150
Units
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Tamb=25℃unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
V
SD
Is
V
GS
=0V, I
D
=1A
0.71
1.0
2.5
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=15V, I
D
=2.9A,
V
GS
=10V
R
GEN
=3Ω
R
GEN
=2.7Ω
V
DS
=15V, I
D
=5.8A,
V
GS
=4.5V,
3.3
4.8
26
4
9.5
1.5
3
nS
nS
nS
nS
nC
nC
nC
Ciss
Coss
Crss
V
DS
=15V, V
GS
=0V,
f=1MHz
823
99
77
pF
Symbol
V
(BR)DSS
Vth
(GS)
I
GSS
I
DSS
R
DS(ON)
gfs
Test conditions
V
GS
=0V,I
D
=250uA
V
DS
= V
GS,
I
D
=250 uA
V
DS
=0V, V
GS
=±12V
V
DS
=30V, V
GS
=0V
V
GS
=2.5V, I
D
=4A
V
GS
=4.5V, I
D
=5A
V
GS
=10V, I
D
=5.8A
V
DS
=5V, I
D
=5A
10
43
28
24
MIN
30
0.7
1.0
1.4
±100
1
54
35
39
TYP
MAX
UNIT
V
V
nA
uA
mΩ
mΩ
mΩ
s
1
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